Absorption coefficients of quantum dot intermediate band material with negligible valence band offsets

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 1797-1799

  Dahal, Som N ^a   Ban, Keun Yong ^a   Honsberg, Christiana ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBING MEDIUM; ABSORPTION COEFFICIENTS; ABSORPTION PROPERTY; BAND GAPS; BAND TRANSITIONS; BARRIER MATERIAL; BULK MATERIALS; COUPLED QUANTUM DOTS; DETAILED BALANCE; EFFECTIVE-MASS THEORY; ELECTRONIC COUPLING; ENERGY STATE; GAAS; GAAS SUBSTRATES; INAS; INTERMEDIATE BAND MATERIALS; INTERMEDIATE BANDS; INTERMEDIATE-BAND SOLAR CELLS; MATERIAL COMBINATION; MATRIX; QD ARRAYS; QUANTUM DOT; QUANTUM DOT NANOSTRUCTURES; QUANTUM DOTS; SINGLE JUNCTION; VALENCE BAND OFFSETS;

ABSORPTION; ABSORPTION SPECTRA; CONVERSION EFFICIENCY; ELECTRON MOBILITY; ENERGY CONVERSION; GALLIUM ALLOYS; GALLIUM ARSENIDE; HETEROJUNCTIONS; INDIUM ARSENIDE; MATERIALS; MULTIPHOTON PROCESSES; NANOSTRUCTURES; OPTICAL WAVEGUIDES; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM; SOLAR CELLS; SOLAR ENERGY; VALENCE BANDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 78650120317     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5615908     Document Type: Conference Paper

References (7)

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