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Volumn 205, Issue SUPPL. 1, 2010, Pages
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Effect of post-deposition annealing on the performance of D.C. sputtered Cu2SnSe3 thin films
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Author keywords
D.C. sputtering; Hall measurement; Solar cell
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Indexed keywords
ABSORPTION COEFFICIENTS;
ABSORPTION LAYER;
ANNEALING TEMPERATURES;
D.C. SPUTTERING;
DIFFERENT PROCESS;
DIRECT BAND GAP;
ELECTRICAL AND OPTICAL PROPERTIES;
ELECTRICAL MOBILITY;
ELECTRICAL RESISTIVITY;
GRAIN SIZE;
HALL MEASUREMENTS;
HIGHER TEMPERATURES;
POST DEPOSITION ANNEALING;
SPUTTERED FILMS;
SPUTTERING TARGET;
TARGET COMPOSITION;
THIN-FILM SOLAR CELLS;
ABSORPTION;
ANNEALING;
CARRIER CONCENTRATION;
ELECTRIC CONDUCTIVITY;
OPTICAL PROPERTIES;
SINTERING;
SOLAR CELLS;
SURFACE STRUCTURE;
THIN FILMS;
VAPOR DEPOSITION;
SEMICONDUCTING SELENIUM COMPOUNDS;
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EID: 78649980092
PISSN: 02578972
EISSN: None
Source Type: Journal
DOI: 10.1016/j.surfcoat.2010.07.067 Document Type: Article |
Times cited : (28)
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References (17)
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