Geometry influence on the Hall effect devices performance

UPB Scientific Bulletin, Series A: Applied Mathematics and Physics

Volumn 72, Issue 4, 2010, Pages 257-271

  Paun, Maria Alexandra ^a   Sallèse, Jean Michel ^a   Kayal, Maher ^a  

^a EPFL   (Switzerland)

Author keywords

Geometrical correction factor; Hall effect sensors; Hall Voltage; Power dissipated; Sensitivity

Indexed keywords

GEOMETRICAL CORRECTION; HALL EFFECT SENSORS; HALL VOLTAGE; POWER DISSIPATED; SENSITIVITY;

CMOS INTEGRATED CIRCUITS; GEOMETRY; GLOBAL OPTIMIZATION; GYRATORS; HALL EFFECT; HALL EFFECT TRANSDUCERS; MATHEMATICAL MODELS; SENSORS;

MAGNETIC FIELD EFFECTS;

EID: 78649901446     PISSN: 12237027     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. R. S Popovic, Hall Effect Devices, Second Edition, Institute of Physics Publishing, 2004
2. T. Kramer, V. Krueckl, E. J. Heller, R. E. Parrott, Self-consistent calculation of electric potentials in Hall devices, Physical Review B, Vol. 81, 205306, 2010
3. Honeywell References, Micro Switch Sensing and Control, Chapter 2, Hall Effect Sensors
4. S. V. Lozanova, C. S. Roumenin, Parallel-Field Silicon Hall Effect Microsensors with Minimal Design Complexity, IEEE Sensors Journal, Vol. 9, No. 7, 761, 2009
5. R. S. Popovic, Z. Randjelovic, D. Manic, Integrated Hall-effect magnetic sensors, Sensors and Actuators A, Vol. 91, 2001, pp. 46-50
6. M. Kayal, M. Pastre, Automatic calibration of Hall sensor microsystems, Microelectronics Journal Vol. 37, 2006, pp. 1569-1575
7. J. Pascal, L. Hébrard, J.-B. Kammerer V. Frick, J.-P. Blondé, First vertical Hall Device in standard 0.35 μrn CMOS technology, Sensors and Actuators A: Physical, Vol. 147, 2008, pp. 41-46