Direct-conversion X-ray detector using lateral amorphous selenium structure

IEEE Sensors Journal

Volumn 11, Issue 2, 2011, Pages 505-509

  Chen, Feng ^a   Wang, Kai ^a   Fang, Yuan ^a   Allec, Nicholas ^a   Belev, George ^b   Kasap, Safa ^b   Karim, Karim S ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

^b UNIVERSITY OF SASKATCHEWAN   (Canada)

Author keywords

Amorphous selenium; direct conversion; metalsemiconductormetal (MSM) structure; X ray imaging

Indexed keywords

AMORPHOUS SELENIUM; BOTTOM ELECTRODES; BOTTOM LAYERS; CHARGE COLLECTION; CHARGE GENERATION; DIRECT CONVERSION; ELECTRODE SPACING; ENERGY DEPOSITS; HIGH VOLTAGE; METALSEMICONDUCTORMETAL (MSM) STRUCTURE; MSM STRUCTURES; PIXEL DETECTOR; SAFETY CONCERNS; SIMULATION RESULT; VERTICAL STRUCTURES; X-RAY DETECTIONS; X-RAY DETECTOR; XRAY IMAGING;

ELECTRIC FIELDS; SELENIUM; X RAY ANALYSIS; X RAYS;

DETECTORS;

EID: 78649426188     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2010.2061841     Document Type: Article

References (10)

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