Engineering grain size and electrical properties of donor-doped barium titanate ceramics

Ceramics International

Volumn 37, Issue 1, 2011, Pages 303-311

  Niesz, Krisztian ^a   Ould Ely, Teyeb ^a   Tsukamoto, Hisashi ^b   Morse, Daniel E ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Quallion LLC   (United States)

Author keywords

C. Electrical properties; Ceramics; Chemical synthesis; Crystal growth

Indexed keywords

ABNORMAL GRAIN GROWTH; BARIUM TITANATE CERAMICS; BATTERY SAFETY; CERAMICS; CHEMICAL SYNTHESIS; COOLING RATES; DONOR-DOPED; ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTY; GRAIN SIZE; OXYGEN ADSORPTION; PRECISE CONTROL; ROOM TEMPERATURE; ROOM-TEMPERATURE RESISTIVITY; SHORT PERIODS; SINTERING CONDITION; SUBMICRON GRAINS; SYSTEMATIC INVESTIGATIONS; THERMAL COEFFICIENTS; THIN OXIDE LAYERS; VAPOR DIFFUSION;

BARIUM; BARIUM TITANATE; CERAMIC MATERIALS; CRYSTAL GROWTH; CRYSTALLIZATION; GAS ADSORPTION; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; HEATING; OXYGEN; SEMICONDUCTOR GROWTH; SINTERING; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION;

ELECTRIC PROPERTIES;

EID: 78649324144     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2010.08.040     Document Type: Article

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