Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain

Applied Physics Letters

Volumn 97, Issue 18, 2010, Pages

  Yin, Chunming ^a   Shen, Bo ^a   Zhang, Qi ^a   Xu, Fujun ^a   Tang, Ning ^a   Cen, Longbin ^a   Wang, Xinqiang ^a   Chen, Yonghai ^b   Yu, Jinling ^b  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITION; GAN-BASED HETEROSTRUCTURES; HETEROSTRUCTURES; INDUCED ELECTRIC FIELDS; PHOTOGALVANIC EFFECTS; SPIN SPLITTINGS; SPIN-ORBIT COUPLINGS; UNI-AXIAL STRAINS;

ALUMINUM; CARRIER CONCENTRATION; CRYSTALS; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS;

GALLIUM ALLOYS;

EID: 78649239949     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3511768     Document Type: Article

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