Nitride-based light-emitting solar cell

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 1807-1809

  Kuwahara, Y ^a   Fujiyama, Y ^a   Iwaya, M ^a   Kamiyama, S ^a   Amano, H ^a   Akasaki, I ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

Electroluminescence; GaInN GaN; LEDs; MOVPE; Photoluminescence; Solar cell

Indexed keywords

ABSORPTION EDGES; ACTIVE LAYER; DOUBLE HETEROJUNCTIONS; EMITTED LIGHT; EXTERNAL QUANTUM EFFICIENCY; FILL FACTOR; FORWARD CURRENTS; GAINN/GAN; GAN LAYERS; III-NITRIDE; INTERNAL QUANTUM EFFICIENCY; LEDS; METAL-ORGANIC VAPOR PHASE EPITAXY; MOLAR FRACTIONS; MOVPE; P-TYPE GAN; SAPPHIRE SUBSTRATES; SECONDARY ION MASS SPECTROMETRY PROFILES;

ABSORPTION; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; OPEN CIRCUIT VOLTAGE; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SOLAR CELLS; SWITCHING CIRCUITS;

QUANTUM EFFICIENCY;

EID: 77955782197     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983529     Document Type: Conference Paper

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