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Electrochimica Acta

Volumn 56, Issue 2, 2010, Pages 863-866

Redox behavior of hemin at p-GaAs(1 0 0) electrode

(4) Toader, A M a Volanschi, E b Lazarescu, M F c Lazarescu, V a

a INSTITUTE OF PHYSICAL CHEMISTRY (Romania)

b UNIVERSITY OF BUCHAREST (Romania)

c NATIONAL INSTITUTE OF MATERIALS PHYSICS (Romania)

Author keywords

Electrochemical impedance spectroscopy (EIS); Hemin; p GaAs(1 0 0); Surface states

Indexed keywords

ADSORBED SPECIES; ELECTROCHEMICAL BEHAVIORS; ELECTROCHEMICAL-IMPEDANCE-SPECTROSCOPY (EIS); GAAS(1 0 0); HELMHOLTZ; HEMIN; IMPEDANCE SPECTROSCOPY; PHOSPHATE BUFFER SOLUTIONS; POTENTIAL DROP; REDOX BEHAVIOR; SEMI-CONDUCTOR SURFACES; SPACE CHARGE REGIONS; SPECTRA ANALYSIS;

CYCLIC VOLTAMMETRY; ELECTROCHEMICAL CORROSION; ELECTROCHEMICAL ELECTRODES; GALLIUM ALLOYS; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM;

ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY;

EID: 78449305262 PISSN: 00134686 EISSN: None Source Type: Journal
DOI: 10.1016/j.electacta.2010.09.083 Document Type: Article

Times cited : (9)

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