Use of epitaxial unipolar barriers to block surface leakage currents in photodetectors

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 10, 2010, Pages 2540-2543

  Savich, G R ^a   Pedrazzani, J R ^a   Maimon, S ^a   Wicks, G W ^a  

^a UNIVERSITY OF ROCHESTER   (United States)

Author keywords

Electrical properties; InAs photodetectors; Leakage currents; Performance

Indexed keywords

DEVICE PERFORMANCE; ELECTRICAL PROPERTY; ELECTRONIC DEVICE; INAS; LIMITING FACTORS; PERFORMANCE; SURFACE CONDUCTION; SURFACE LEAKAGE; SURFACE LEAKAGE CURRENTS; SURFACE PASSIVATION;

ECONOMIC ANALYSIS; ELECTRIC PROPERTIES; ELECTRON DEVICES; INDIUM ARSENIDE; OPTOELECTRONIC DEVICES; PASSIVATION; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

LEAKAGE CURRENTS;

EID: 78449248080     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983911     Document Type: Article

References (3)

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