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Volumn 97, Issue 19, 2010, Pages

Giant scattering parameter and enhanced thermoelectric properties originating from synergetic scattering of electrons in semiconductors with metal nanoinclusions

Author keywords

[No Author keywords available]

Indexed keywords

FIGURE OF MERIT; INTERFACE POTENTIAL BARRIER; IONIZED IMPURITIES; NANO INCLUSION; PBTE; PERTURBATION THEORY; RELAXATION TIME APPROXIMATION; SCATTERING PROBABILITIES; SCATTERING PROCESS; SINGLE SCATTERING; THERMOELECTRIC PROPERTIES; THERMOPOWERS;

EID: 78249272691     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3515298     Document Type: Article
Times cited : (31)

References (14)
  • 7
    • 36049058016 scopus 로고
    • 0031-899X,. 10.1103/PhysRev.181.1336
    • M. Cutler and N. F. Mott, Phys. Rev. 0031-899X 181, 1336 (1969). 10.1103/PhysRev.181.1336
    • (1969) Phys. Rev. , vol.181 , pp. 1336
    • Cutler, M.1    Mott, N.F.2
  • 9
    • 45249124673 scopus 로고    scopus 로고
    • 0556-2805,. 10.1103/PhysRevB.77.214304
    • S. V. Faleev and F. Ĺonard, Phys. Rev. B 0556-2805 77, 214304 (2008). 10.1103/PhysRevB.77.214304
    • (2008) Phys. Rev. B , vol.77 , pp. 214304
    • Faleev, S.V.1    Ĺonard, F.2
  • 13
    • 84892237915 scopus 로고    scopus 로고
    • (Springer, Heidelberg, Dordrecht, London, New York). 10.1007/978-3-642- 03303-2
    • C. Hamaguchi, Basic Semiconductor Physics (Springer, Heidelberg, Dordrecht, London, New York, 2010). 10.1007/978-3-642-03303-2
    • (2010) Basic Semiconductor Physics
    • Hamaguchi, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.