Another approach to form p emitter for rear junction n-type solar cells: Above 17.0% efficiency cells with CVD boron-doped epitaxial emitter

Solar Energy Materials and Solar Cells

Volumn 95, Issue 1, 2011, Pages 11-13

  Gong, C ^a   Van Nieuwenhuysen, K ^a   Posthuma, N E ^a   Van Kerschaver, E ^a   Poortmans, J ^a  

^a IMEC   (Belgium)

Author keywords

Boron; Epitaxial; N Type

Indexed keywords

BORON-DOPED; CELL EFFICIENCY; EMITTER DOPING; EPITAXIAL; FILL FACTOR; HIGH POTENTIAL; HIGH-EFFICIENCY CELLS; METAL CONTACTS; N-TYPE; N-TYPE MATERIALS; P-TYPE; PROCESS TIME;

DOPING (ADDITIVES); SOLAR CELLS;

BORON;

EID: 78149359572     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.04.033     Document Type: Conference Paper

References (5)

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2. Christian Schmiga, Henning Nagel, and Jan Schmidt 19% Efficiency n-type czochralski silicon solar cells with screen-printed aluminum-alloyed rear emitter" Progress in Photovoltaics: Research and Applications 14 6 2006 533 539
3. L. Mai, Adeline Sugianto, Alison M. Wenham Stuart R. Wenham, Improved process for the formation of Al-alloyed emitter in n-type solar cells, in: Proceedings of the 18th International Photovoltaic Science and Engineering Conference and Exhibition, Kolkata, India, 2009, Area 1.
4. C. Gong, K. Van Nieuwenhuysen, N.E. Posthuma, E. Van Kerschaver J. Poortmans, Epitaxial boron-doped emitter by CVD for rear junction n-type solar cells, in: Proceedings of the 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 2009, pp. 1715-1718.
5. K. Van Nieuwenhuysen, F. Duerinckx, I. Kuzma, M. Recaman Payo, G. Beaucarne, J. Poortmans, Optimal use of CVD for epitaxial thin film crystalline silicon solar cells: emitter formation by CVD, in: Proceedings of the 22nd European Photovoltaic Solar Energy Conference and Exhibition, Milan, Italy, 2007, pp. 920923.