Damage-free reactive ion etch for high-efficiency large-area multi-crystalline silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 95, Issue 1, 2011, Pages 66-68

  Lee, Kyoung Soo ^a   Ha, Man Hyo ^a   Kim, Jong Hwan ^a   Jeong, Ji Weon ^a  

^a LG Electronics Inc   (South Korea)

Author keywords

Damage free; Low reflectance; RIE (reactive ion etching)

Indexed keywords

CHEMICAL SOLUTIONS; CRYSTALLOGRAPHIC CHARACTERISTICS; DAMAGE-FREE; EFFICIENCY GAIN; ETCH DEPTH; FIRING CONDITIONS; GAS RATIO; HIGH EFFICIENCY; HIGH-POWER; LOW REFLECTANCE; MULTI-CRYSTALLINE SILICON SOLAR CELLS; MULTICRYSTALLINE SI; PHYSICAL DAMAGES; PLASMA POWER; PLASMA-INDUCED; REACTIVE ION; REACTIVE ION ETCH; SELF-MASKING; SI SOLAR CELLS; SI WAFER; SINGLE-CRYSTALLINE; SOLAR CELL PERFORMANCE; SURFACE REFLECTANCE; THIN WAFERS; WAFER SURFACE; WET-PROCESSING;

CRYSTALLINE MATERIALS; IONS; OPTIMIZATION; REACTIVE ION ETCHING; REFLECTION; SILICON; SILICON SOLAR CELLS; SILICON WAFERS; SOLAR CELLS; SURFACE MORPHOLOGY; TEXTURING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78149357433     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.03.007     Document Type: Conference Paper

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