Electronic structure of bis(silyl)carbon-, bis(silyl)silicon-, and bis(silyl)germanium-centered radicals (R3Si)2XE •(E = C, Si, Ge; X = H, Re(CO)5, F): EPR and DFT studies

Organometallics

Volumn 29, Issue 21, 2010, Pages 5596-5606

  Sheberla, Dennis ^a   Tumanskii, Boris ^a   Bravo Zhivotovskii, Dmitry ^a   Molev, Gregory ^a   Molev, Victoria ^a   Lee, Vladimir Ya ^b   Takanashi, Kazunori ^b   Sekiguchi, Akira ^b   Apeloig, Yitzhak ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 78149304012     PISSN: 02767333     EISSN: 15206041     Source Type: Journal    
DOI: 10.1021/om100812b     Document Type: Article

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