The formation of stacking fault tetrahedra in Al and Cu: II. SFT growth by successive absorption of vacancies generated by dipole annihilation

Acta Materialia

Volumn 59, Issue 1, 2011, Pages 10-18

  Wang, H ^a   Xu, D S ^a   Yang, R ^a   Veyssiere P ^b  

^a INSTITUTE OF METAL RESEARCH   (China)

^b CNRS   (France)

Author keywords

Dislocation annihilation; Dislocation dipole; Molecular dynamics simulations; Stacking fault tetrahedron; Vacancy cluster

Indexed keywords

DISLOCATION ANNIHILATION; DISLOCATION DIPOLE; MOLECULAR DYNAMICS SIMULATIONS; STACKING FAULT TETRAHEDRON; VACANCY CLUSTER;

COMPUTATIONAL MECHANICS; GEOMETRY; VACANCIES;

MOLECULAR DYNAMICS;

EID: 78049528354     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2010.07.044     Document Type: Article

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