Band gap and chemically ordered domain structure of a graphene analogue BxCyNz

Solid State Communications

Volumn 150, Issue 45-46, 2010, Pages 2262-2265

  Venu, K ^a   Kanuri, S ^a   Raidongia, K ^a   Hembram, K P S S ^a   Waghmare, U V ^a   Datta, R ^a  

^a JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

Author keywords

A. BCN; A. Semiconductor; D. Band gap; E. EELS

Indexed keywords

A. BCN; A. SEMICONDUCTOR; ABSORPTION EDGES; BAND GAPS; E. EELS; FIRST-PRINCIPLES; HIGH-RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY; LOCAL PHASE; ORDERED CONFIGURATION; ORDERED DOMAINS;

ABSORPTION; BORON NITRIDE; ELECTRONIC STRUCTURE; ENERGY DISSIPATION; ENERGY GAP; GRAPHENE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 78049424074     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.09.029     Document Type: Article

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