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Applied Physics A: Materials Science and Processing

Volumn 101, Issue 1, 2010, Pages 53-59

A model of nanosecond laser ablation of compound semiconductors accounting for non-congruent vaporization

(3) Bulgakova, Olga A a,b Bulgakova, Nadezhda M a Zhukov, Vladimir P c

a KUTATELADZE INSTITUTE OF THERMOPHYSICS (Russian Federation)

b NOVOSIBIRSK STATE UNIVERSITY (Russian Federation)

c INSTITUTE OF COMPUTATIONAL TECHNOLOGIES (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ABLATION THRESHOLDS; BULK MATERIALS; COMPOUND SEMICONDUCTORS; CONTROLLED STOICHIOMETRY; DIFFUSION EQUATIONS; EFFECTIVE MEDIUM; EXPERIMENTAL CONDITIONS; HEAT-FLOW; KRF LASERS; LASER FLUENCES; MATERIAL COMPONENTS; MATERIAL PROPERTY; MULTI-SHOT IRRADIATION; NANOSECOND LASER ABLATION; OPTICAL RESPONSE; PLASMA PLUMES; PLASMA SHIELDING; REFLECTION MODELS; RESOLIDIFICATION;

CADMIUM; CADMIUM COMPOUNDS; CADMIUM TELLURIDE; IRRADIATION; KRYPTON; LASER ABLATION; LASER APPLICATIONS; STOICHIOMETRY;

SEMICONDUCTOR LASERS;

EID: 78049345250 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-5757-2 Document Type: Article

Times cited : (26)

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