Preparation of p-type CdS thin films and in situ dark conductivity in vacuum deposited CdS:Cu films

Applied Surface Science

Volumn 257, Issue 5, 2010, Pages 1623-1627

  Xie, Hanke ^a   Tian, Caijuan ^a   Li, Wei ^a   Feng, Lianghuan ^a   Zhang, Jingquan ^a   Wu, Lili ^a   Cai, Yaping ^a   Lei, Zhi ^a   Yang, Yujin ^a  

^a SICHUAN UNIVERSITY   (China)

Author keywords

CdS thin films; Compensation mechanism; p Type conductivity

Indexed keywords

ANNEALING; CADMIUM SULFIDE; CONDUCTIVE FILMS; COPPER; FILM PREPARATION; II-VI SEMICONDUCTORS; PHOTOIONIZATION; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; TEMPERATURE DISTRIBUTION; THIN FILMS; VACUUM EVAPORATION; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

AS-DEPOSITED THIN FILMS; CDS THIN FILMS; COMPENSATION MECHANISM; COMPENSATION PROCESS; P TYPE CONDUCTIVITY; TEMPERATURE DEPENDENCE; VACUUM CO-EVAPORATION TECHNIQUE; X-RAY DIFFRACTION SPECTRUM;

SULFUR COMPOUNDS;

EID: 78049294656     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.08.110     Document Type: Article

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