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Volumn 43, Issue 5, 1996, Pages 766-773

Optimizing the match in weakly inverted MOSFET's by gated lateral bipolar action

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; GATES (TRANSISTOR); MATHEMATICAL MODELS; OPTIMIZATION; STATISTICAL METHODS;

EID: 0030150153     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.491254     Document Type: Article
Times cited : (3)

References (15)
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    • (1985) Design of MOS VLSI Circuits for Telecommunications , pp. 104-144
    • Vittoz, E.A.1
  • 3
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    • Characterization and modeling of mismatch in MOS transistors for precision analog design
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    • Lakshmikumar, K.R.1    Hadaway, R.A.2    Copeland, M.A.3
  • 5
    • 0026819378 scopus 로고
    • Statistical modeling of device mismatch for analog MOS integrated circuit
    • Feb.
    • C. Michael and M. Ismail, "Statistical modeling of device mismatch for analog MOS integrated circuit," IEEE J. Solid-State Circuits, vol. 27, pp. 154-165, Feb. 1992.
    • (1992) IEEE J. Solid-State Circuits , vol.27 , pp. 154-165
    • Michael, C.1    Ismail, M.2
  • 7
    • 0028369135 scopus 로고
    • Measurement of MOS current mismatch in the weak inversion region
    • Feb.
    • F. Forti and M. E. Wright, "Measurement of MOS current mismatch in the weak inversion region," IEEE J. Solid-State Circuits, vol. 29, pp. 138-142, Feb. 1994.
    • (1994) IEEE J. Solid-State Circuits , vol.29 , pp. 138-142
    • Forti, F.1    Wright, M.E.2
  • 8
    • 0030087383 scopus 로고    scopus 로고
    • Dependence of current match on back-gate bias in weakly inverted MOS transistors and its modeling
    • Feb.
    • M. J. Chen, J. S. Ho, and T. H. Huang, "Dependence of current match on back-gate bias in weakly inverted MOS transistors and its modeling," IEEE J. Solid-State Circuits, vol. 31, no. 2, pp. 259-262, Feb. 1996.
    • (1996) IEEE J. Solid-State Circuits , vol.31 , Issue.2 , pp. 259-262
    • Chen, M.J.1    Ho, J.S.2    Huang, T.H.3
  • 10
    • 0029209318 scopus 로고
    • Empirical modeling for gate-controlled collector current of lateral bipolar transistors in an n-MOSFET structure
    • Jan.
    • T. H. Huang and M. J. Chen, "Empirical modeling for gate-controlled collector current of lateral bipolar transistors in an n-MOSFET structure," Solid-State Electronics, vol. 38, pp. 115-119, Jan. 1995.
    • (1995) Solid-State Electronics , vol.38 , pp. 115-119
    • Huang, T.H.1    Chen, M.J.2
  • 11
    • 0029244655 scopus 로고
    • Base current reversal phenomenon in a CMOS compatible high-gain n-p-n gated lateral bipolar transistor
    • Feb.
    • _, "Base current reversal phenomenon in a CMOS compatible high-gain n-p-n gated lateral bipolar transistor," IEEE Trans. Electron. Devices, vol. 42, pp. 321-327, Feb. 1995.
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  • 14
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    • E. A. Vittoz, "MOS transistors operated in the lateral bipolar mode and their application in CMOS technology," IEEE J. Solid-State Circuits, vol. SSC-18, pp. 273-279, June 1983.
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    • Vittoz, E.A.1
  • 15
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    • A 50-db variable gain amplifier using parasitic bipolar transistors in CMOS
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    • T. W. Pan and A. Abidi, "A 50-db variable gain amplifier using parasitic bipolar transistors in CMOS," IEEE J. Solid-State Circuits, vol. 24. pp. 951-961, Aug. 1989.
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    • Pan, T.W.1    Abidi, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.