Evidence for p-type InN

AIP Conference Proceedings

Volumn 893, Issue , 2007, Pages 343-344

  Ager III, J W ^a   Yu, K M ^a   Jones, R E ^a,b   Yamaguchi, D M ^a,b   Li, S X ^a,b   Walukiewicz, W ^a   Haller, E E ^a,b   Lu, H ^c   Schaff, W J ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b No 1760   (United States)

^c School of Chemical and Molecular Engineering   (United States)

Author keywords

Capacitance voltage; Doping; InN; P type

Indexed keywords

EID: 77958452181     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2729908     Document Type: Conference Paper

References (3)

1. I. Mahboob, T. D. Veal, C. F. McConville, Hai Lu, and W. J. Schaff, Phys. Rev. Lett. 92, 36804 (2004).
2. S.X. Li, K.M. Yu, J. Wu, R.E. Jones, W. Walukiewicz, J.W. Ager III, W. Shan, E.E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. B 71, 161201(R) (2005).
3. R. E. Jones, K. M. Yu, S. X. Li, W. Walukiewicz, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. Lett. 96, 125505 (2006).