Beveling of silicon carbide wafer by plasma etching using atmospheric-pressure plasma

Japanese Journal of Applied Physics

Volumn 49, Issue 8 PART 2, 2010, Pages

  Sano, Yasuhisa ^a   Kato, Takehiro ^a   Yamamura, Kazuya ^a   Mimura, Hidekazu ^a   Matsuyama, Satoshi ^a   Yamauchi, Kazuto ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE PLASMAS; CHEMICAL INERTNESS; ELECTRIC FIELD INTENSITIES; HIGH EFFICIENCY; RADIUS OF CURVATURE; SILICON CARBIDE WAFERS; SURFACE POLISHING;

ATMOSPHERIC CHEMISTRY; CHEMICAL POLISHING; PLASMA ETCHING; PLASMAS; SILICON CARBIDE; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77958092268     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.08JJ03     Document Type: Article

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