Temperature dependence of plasma chemical vaporization machining of silicon and silicon carbide

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 847-850

  Sano, Yasuhisa ^a   Watanabe, Masayo ^a   Kato, Takehiro ^a   Yamamura, Kazuya ^a   Mimura, Hidekazu ^a   Yamauchi, Kazuto ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Arrhenius plot; Atmospheric pressure plasma; Etching; Plasma chemical vaporization machining; temperature dependence

Indexed keywords

ARRHENIUS PLOTS; ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; ETCHING; POWER SEMICONDUCTOR DEVICES; SILICON CARBIDE; SURFACE ROUGHNESS; TEMPERATURE DISTRIBUTION; VAPORIZATION; WIDE BAND GAP SEMICONDUCTORS;

ATMOSPHERIC PRESSURE PLASMAS; ETCHING TEMPERATURE; LOW PRESSURE PLASMA; MACHINING CHARACTERISTICS; PLASMA CHEMICAL VAPORIZATION MACHINING; RF POWER DEPENDENCE; SILICON CARBIDES (SIC); TEMPERATURE DEPENDENCE;

ATMOSPHERIC TEMPERATURE;

EID: 63849208926     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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