Quality control of epitaxial LiCoO2 thin films grown by pulsed laser deposition

Journal of Materials Research

Volumn 25, Issue 10, 2010, Pages 1886-1889

  Ohnishi, T ^a,b   Hang, B T ^a   Xu, X ^a,b   Osada, M ^a,b   Takada, K ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEX COMPOUNDS; COMPOSITION CONTROL; CRYSTAL QUALITIES; EPITAXIALLY GROWN; GROWTH PARAMETERS; HIGH PRESSURE; HIGH QUALITY; IMPURITY PHASIS; LASER CONDITIONS; LOW OXYGEN PARTIAL PRESSURE; VALENCE STATE;

ABLATION; COBALT; CRYSTAL IMPURITIES; DEPOSITION; OXYGEN; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; QUALITY CONTROL; THIN FILMS; VAPOR DEPOSITION;

PULSED LASERS;

EID: 77958089172     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2010.0250     Document Type: Article

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