Single nanowire electrochemical devices

Nano Letters

Volumn 10, Issue 10, 2010, Pages 4273-4278

  Mai, Liqiang ^a,b   Dong, Yajie ^b   Xu, Lin ^a   Han, Chunhua ^a  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^b HARVARD UNIVERSITY   (United States)

Author keywords

charge discharge; electrical transport; silicon; Single nanowire electrodes; vanadium oxide

Indexed keywords

CHARGE/DISCHARGE; CORE/SHELL; DEINTERCALATION; ELECTRICAL TRANSPORT; ELECTROCHEMICAL DEVICES; ELECTROCHEMICAL TEST; ELECTRODE CAPACITY; ENERGY STORAGE DEVICES; IN-SITU; IN-SITU PROBING; LAYERED STRUCTURES; LITHIUM ION INSERTION; LITHIUM IONS; NANO SCALE; NANOWIRE CONDUCTANCE; RAMAN MAPPING; SI NANOWIRE; SINGLE NANOWIRES; STRUCTURE CHANGE; VANADIUM OXIDE; VANADIUM OXIDES; WORKING ELECTRODE;

ELECTRIC DISCHARGES; ELECTRIC PROPERTIES; ELECTROCHEMICAL ELECTRODES; ELECTROCHEMICAL PROPERTIES; IONS; LITHIUM; LITHIUM ALLOYS; NANOWIRES; OXIDES; SILICON; VANADIUM; VANADIUM ALLOYS; VANADIUM COMPOUNDS;

ELECTRIC WIRE;

EID: 77958032956     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl102845r     Document Type: Article

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