Space-charge plane-wave interaction at semiconductor substrate boundary

IEEE Transactions on Microwave Theory and Techniques

Volumn 58, Issue 10, 2010, Pages 2609-2618

  Elabyad, Ibrahim A ^a   Eldessouki, Mohamed S ^b   El Hennawy, Hadia M ^c  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b KING SAUD UNIVERSITY   (Saudi Arabia)

^c AIN SHAMS UNIVERSITY   (Egypt)

Author keywords

Charge accumulation; plane wave interaction; semiconductor substrate; wave charge transport model

Indexed keywords

CHARGE ACCUMULATION; CHARGE CARRIER DENSITY; CHARGE TRANSPORT; CLOSED-FORM EXPRESSION; CONDUCTION CURRENT; DIELECTRIC-SEMICONDUCTOR INTERFACES; FIELD COMPONENTS; FUNDAMENTAL MODES; GROUND PLANES; NORMAL COMPONENT; PLANE WAVE; PLANE-WAVE INTERACTION; POLARIZED INCIDENT WAVES; REFLECTION COEFFICIENTS; SCREENING EFFECT; SEMI-CONDUCTOR SURFACES; SEMICONDUCTOR SUBSTRATE; SPACE CHARGES; TANGENTIAL COMPONENTS; THEORETICAL INVESTIGATIONS;

CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ENERGY DISSIPATION; MODELS; REFLECTION; SUBSTRATES;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 77957995090     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2010.2065931     Document Type: Article

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