Structure-property relationship of acceptor-substituted oligothiophenes

Tetrahedron

Volumn 66, Issue 45, 2010, Pages 8729-8733

  Wrackmeyer, M S ^a   Hummert, M ^a   Hartmann, H ^a   Riede, M K ^a   Leo, K ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Absorber material; Dicyanovinyl; Dioxaborine; Oligothiophene; Organic solar cell

Indexed keywords

2 BROMO 5 DICYANOVINYLTHIOPHENE; 5' BROMO 5 DICYANOVINYL 2,2' BITHIOPHENE; 5,5'' BIS[2,2 DIFLUORO 6 METHYL 1,3,2 (2H) DIOXABORIN 4 YL] 2,2':5',2'' TERTHIOPHENE; 5,5'' DI[2,2 DICYANOVINYL] 2,2':5',2'' TERTHIOPHENE; 5,5''' BIS[2,2 DIFLUORO 6 METHYL 1,3,2 (2H) DIOXABORIN 4 YL] 2,2':5',2'':5'',2''' QUATERTHIOPHENE; 5,5''' DI(2,2 DICYANOVINYL) 2,2':5',2'':5'',2'''' QUATERTHIOPHENE; 5,5'''' DI(2,2 DICYANOVINYL) 2,2':5',2'':5'',2''':5''',2'''' QUINQUETHIOPHENE; 5,5''''' DI(2,2 DICYANOVINYL) 2,2':5',2'':5'',2''':5''',2'''':5'''',2''''' SEXITHIOPHENE; DICHLOROMETHANE; THIOPHENE DERIVATIVE; UNCLASSIFIED DRUG;

ABSORPTION; AMINO ACID ANALYSIS; AMINO ACID SUBSTITUTION; ARTICLE; CHEMICAL STRUCTURE; CYCLIC POTENTIOMETRY; ELECTROCHEMISTRY; FILM; OXIDATION REDUCTION POTENTIAL; PRIORITY JOURNAL; QUANTITATIVE STRUCTURE PROPERTY RELATION; SEMICONDUCTOR;

EID: 77957979875     PISSN: 00404020     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tet.2010.09.004     Document Type: Article

References (29)

1. U. Mitschke, and P. Baeuerle J. Mater. Chem. 10 2000 1471
2. M. Mazzeo, D. Pisignano, L. Favaretto, G. Barbarella, R. Cingolani, and G. Gigli Synth. Met. 139 2003 671
3. C. Videlot, A.E. Kassmi, and D. Fichou Sol. Energy Mater. Sol. Cells 63 2000 69
4. D. Wynands, M. Levichkova, M. Riede, M. Pfeiffer, P. Baeuerle, R. Rentenberger, P. Denner, and K. Leo J. Appl. Phys. 107 2010 014517
5. K. Schulze, C. Uhrich, R. Schüppel, K. Leo, M. Pfeiffer, E. Brier, E. Reinold, and P. Bäuerle Adv. Mater. 18 2006 2872
6. K. Schulze, M. Riede, E. Brier, E. Reinold, P. Baeuerle, and K. Leo J. Appl. Phys. 104 2008 074511
7. A. Mishra, C.-Q. Ma, and P. Baeuerle Chem. Rev. 109 2009 1141
8. P.F. Xia, X.J. Feng, J. Lu, S.-W. Tsang, R. Movileanu, Y. Tao, and M.S. Wong Adv. Mater. 20 2008 4810
9. D. Rohde, L. Dunsch, A. Tabet, H. Hartmann, and J. Fabian J. Phys. Chem. 110B 2006 8223
10. T.M. Papenfus, M.W. Burand, D.E. Janzen, and K.R. Mann Org. Lett. 5 2003 1535
11. P.F. Xia, X.J. Feng, J. Lu, R. Movileanu, Y. Tao, J.-M. Baribeau, and M.S. Wong J. Phys. Chem. C 112 2008 16714
12. Y. Liu, J. Zhou, X. Wan, and Y. Chen Tetrahedron 65 2009 5209
13. J. Fabian, and H. Hartmann J. Phys. Org. Chem. 17 2004 359
14. Pfeiffer, M.; Schueppel, R.; Uhrich, C.; Petrich, A.; Leo, K.; Baeuerle, P.; Kilickiran, P.; Brier, E. WO 2006092135, 2006;
15. Chem. Abstr. 145 2006 317960
16. Halik, M.; Schmid, G.; Davis, L. DE 2001-10152938 2001, US 2002-281828 2002, US 2004-993117, 2004;
17. Chem. Abstr. 137 2002 378622
18. G. Zotti, S. Zecchin, B. Vercelli, A. Berlin, S. Grimoldi, M.C. Pasini, and M.M.M. Raposo Chem. Mater. 17 2005 6492
19. J. Hou, Z. Tan, Y. Yan, Y. He, C. Yang, and Y. Li J. Am. Chem. Soc. 128 2006 4911
20. J. Huang, J. Miragliotta, A. Becknell, and H.E. Katz J. Am. Chem. Soc. 129 2007 9366
21. G. Goerlitz, H. Hartmann, B. Nuber, and J.J. Wolff J. Prakt. Chem. 341 1999 167
22. R. Chen, X. Yang, H. Tian, X. Wang, A. Hagfeldt, and L. Sun Chem. Mater. 19 2007 4007
23. M.M.M. Raposo, A.M.C. Fonseca, and G. Kirsch Tetrahedron 60 2004 4071
24. J.K. Stille Angew. Chem., Int. Ed. Engl. 25 1986 508
25. B. Maennig, J. Drechsel, D. Gebeyehu, P. Simon, F. Kozlowski, A. Werner, F. Li, S. Grundmann, S. Sonntag, M. Koch, K. Leo, M. Pfeiffer, H. Hoppe, D. Meissner, N.S. Sariciftci, I. Riedel, V. Dyakonov, and J. Parisi Appl. Phys. 79 2004 1
26. M. Riede, T. Mueller, W. Tress, R. Schueppel, and K. Leo Nanotechnology 19 2008 424001/1
27. A.I. Plekhanov, A.I. Gorkovenko, N.A. Orlova, A.E. Simanchuk, and V.V. Shelkovnikov High Energy Chem. 43 2009 607
28. Y.-X. Li, X.-T. Tao, F.-J. Wang, T. He, and M.-H. Jiang Org. Electron. 10 2009 910
29. N.G. Connelly, and W.E. Geiger Chem. Rev. 96 1996 877