Temperature dependent single photon emission in InP/GaInP quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 10, 2010, Pages 2509-2513

  Nowak, A K ^a   Gallardo, E ^a   Sarkar, D ^a,c   Sanvitto, D ^a   Van Der Meulen, H P ^a   Calleja, J M ^a   Ripalda, J M ^b   Gonzlez, L ^b   Gonzlez, Y ^b  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Dark exciton; Quantum dot; Single photon emitter

Indexed keywords

ANTI-BUNCHING; DARK EXCITONS; EXCITON TRANSITIONS; INTENSITY CORRELATION; QUANTUM DOT; QUANTUM DOTS; SINGLE PHOTON EMISSION; SINGLE PHOTON EMITTERS; TEMPERATURE DEPENDENT; THERMAL EXCITATION; ZERO DELAY;

EXCITONS; OPTICAL WAVEGUIDES; PARTICLE BEAMS; PHOTONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77957978628     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2010.02.025     Document Type: Conference Paper

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