The structure and optical properties of nanocrytalline lead sulfide films

Semiconductors

Volumn 44, Issue 10, 2010, Pages 1349-1356

  Sadovnikov, S I ^a   Kozhevnikova, N S ^a   Rempel, A A ^a  

^a INSTITUTE OF SOLID STATE CHEMISTRY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77957977157     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782610100180     Document Type: Article

References (30)

1. W. W. Scanlon, J. Phys. Chem. Sol. 8, 423 (1959).
2. R. B. Schoolar and J. R. Dixon, Phys. Rev. A 137, 667 (1965).
3. J. N. Zemmel, J. D. Jensen, and R. B. Schoolar, Phys. Rev. A 140, 330 (1965).
4. S. B. Qadri, A. Singh, and M. Yousuf, Thin Sol. Films 431-432, 506 (2003).
5. S. I. Sadovnikov, A. I. Gusev, and A. A. Rempel', Pis'ma Zh. Éksp. Teor. Fiz. 89, 279 (2009) [JETP Lett. 89, 238 (2009)].
6. S. I. Sadovnikov and A. A. Rempel', Dokl. Akad. Nauk 428, 48 (2009).
7. S. I. Sadovnikov, N. S. Kozhevnikova, and A. A. Rempel', Fiz. Khim. Stekla 35, 74 (2009) [Glass Phys. Chem. 35, 60 (2009)].
8. R. W. Morton, D. E. Simon, J. J. Gislason, and S. Taylor, Adv. X-ray Anal. 46, 80 (2003).
9. X'Pert Plus Version 1. 0. Program for Crystallography and Rietveld Analysis, Philips Analytical B. V., Koninklijke Philips Electronic N. V.
10. D. A. Davydov and A. I. Gusev, Pis'ma Zh. Éksp. Teor. Fiz. 91, 293 (2010) [JETP Lett. 91, 286 (2010)].
11. D. A. Davydov and A. I. Gusev, Zh. Éksp. Teor. Fiz. 135, 301 (2009) [JETP 108, 267 (2009)].
12. W. H. Hall and G. K. Williamson, Proc. Phys. Soc. (London) B 64(383), 937 (1951).
13. G. K. Williamson and W. H. Hall, Acta Metal. 1, 22 (1953).
14. J. I. Pankove, Optical Processes in Semiconductors, 2nd ed. (Dover, New York, 1975).
15. V. L. Bonch-Bruevich and S. G. Kalashnikov, Semiconductor Physics, 2nd ed. (Nauka, Moscow, 1990) [in Russian].
16. C. F. Klingshirn, Semiconductor Optics (Springer, New York, 2005).
17. Y. Wang, A. Suna, W. Mahier, and R. Kasowski, J. Chem. Phys. 87, 7315 (1987).
18. A. Sashchiuk, E. Lifshitz, R. Reisfeld, T. Saraidarov, M. Zelner, and A. Willenz, J. Sol.-Gel Sci. Technol. 24, 31 (2002).
19. R. J. Elliot, Phys. Rev. 108, 1384 (1957).
20. M. R. Holter, S. Nudelman, G. H. Suits, W. L. Wolfe, and G. J. Zissis, Fundamentals of Infrared Technology (MacMillan, New York, 1962).
21. D. M. Mittleman, R. W. Schoenlein, J. J. Shiang, V. L. Colvin, A. P. Alivisatos, and C. V. Shank, Phys. Rev. B 49, 14435 (1994).
22. Al. L. Éfros and A. L. Éfros, Fiz. Tekh. Poluprovodn. 16, 1209 (1982) [Sov. Phys. Semicond. 16, 772 (1982)].
23. L. E. Brus, J. Chem. Phys. 80, 4403 (1984).
24. R. Rosetti, R. Hull, J. M. Gibson, and L. E. Brus, J. Chem. Phys. 83, 1406 (1985).
25. L. Brus, J. Phys. Chem. 90, 2555 (1986).
26. Y. Kayanuma, Phys. Rev. B 38, 9797 (1988).
27. A. I. Ekimov and A. A. Onushchenko, Fiz. Tekh. Poluprovodn. 16, 1215 (1982) [Sov. Phys. Semicond. 16, 775 (1982)].
28. A. I. Gusev, Nanomaterials, Nanostructures, and Nanotechnologies, 3th ed. (Fizmatlit, Moscow, 2009), p. 166.
29. S. Jana, R. Thapa, R. Maity, and K. K. Chattopadhyay, Physica E 40, 3121 (2008).
30. K. F. Cuff, M. R. Ellet, C. D. Kuglin, and L. R. Williams, in Proc. of the 7th Int. Conf. on Phys. Semiconductors (Dunod, Paris, 1964), p. 677.