Diodes in CMOS for millimeter and sub-millimeter wave circuits

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Volumn , Issue , 2010, Pages 23-24

  Mao, C ^a,b   Shim, D ^a   Han, R ^a   Sankaran, S ^a,c   Seok, E ^a,c   Zhang, Y ^d   O, K K ^a,d  

^a UNIVERSITY OF FLORIDA   (United States)

^b INTEGRATED DEVICE TECHNOLOGY INC   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d UNIVERSITY OF TEXAS AT DALLAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS CIRCUITS; HIGH FREQUENCY PERFORMANCE; MILLIMETER-WAVE APPLICATIONS; PROCESS MODIFICATIONS; SCHOTTKY DIODES; SPEED IMPROVEMENT;

CMOS INTEGRATED CIRCUITS; DIODES; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; SCHOTTKY BARRIER DIODES;

VLSI CIRCUITS;

EID: 77957904250     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2010.5488966     Document Type: Conference Paper

References (6)

1. S. Sankaran et al., "Schottky Barrier Diodes for Millimeter Wave and Detection in a Foundry CMOS Process," IEEE Electron Device Letts., vol. 26, no. 7, pp. 492-494, Jul. 2005
2. S. Sankaran, et al, "Towards THz Operation of CMOS", Intl. Solid-State Ckts. Conf., pp. 202-203, Feb. 2009.
3. D. Shim, et al, "Complementary Antiparallel Schottky Barrier Diode Pair in a 0.13-μm Logic CMOS Technology", IEEE Electron Device Letts., vol. 29, no. 6, pp. 606-608, Jun. 2008.
4. C. Mao and K. K. O, "60-GHz Hybrid Transmit/Receive Switch Using p-n Diode and MOS Transistors", in Symp.on VLSI Ckts, Jun. 2009, pp. 248-249.
5. C. Mao et al., "125-GHz Diode Frequency Doubler in 0.13-μm CMOS", IEEE J. Solid-State Circuits, vol. 44, no. 5, pp. 1531-1538, May 2009.
6. E. Seok et al., "A mm-Wave Schottky Diode Detector in 130-nm CMOS", in Symp. on VLSI Ckts, Jun. 2006, pp. 178-179.