High-power narrow-linewidth optically pumped dilute nitride disk laser with emission at 589 nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7720, Issue , 2010, Pages

  Leinonen, Tomi ^a   Härkönena, Antti ^a   Korpijärvia, Ville Markus ^a   Guina, Mircea ^a   Epstein, Ryan J ^b   Murray, James T ^b   Fetzer, Gregory J ^b  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b ARETÉ ASSOCIATES   (United States)

Author keywords

Dilute nitride; GaInAsN; III V semiconductors; Orange; Quantum well lasers; SDL; Surface emitting lasers; VECSEL; Yellow

Indexed keywords

DILUTE NITRIDES; GAINASN; II-IV SEMICONDUCTORS; ORANGE; QUANTUM WELL; SDL; SURFACE EMITTING; VECSEL; YELLOW;

CONVERSION EFFICIENCY; DISKS (STRUCTURAL COMPONENTS); EPITAXIAL GROWTH; GALLIUM ALLOYS; LASERS; LINEWIDTH; MIRRORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES; PUMPING (LASER); SEMICONDUCTOR QUANTUM WELLS; SURFACE EMITTING LASERS;

QUANTUM WELL LASERS;

EID: 77957880619     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.854747     Document Type: Conference Paper

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