GaN technology for microwave and millimeter wave applications

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2010, Pages 1222-1225

  Kolias, Nicholas J ^a   Whelan, Colin S ^a   Kazior, Thomas E ^a   Smith, Kurt V ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

Gallium compounds; Microwave devices; MMICs

Indexed keywords

GAN TECHNOLOGY; MILLIMETER-WAVE APPLICATIONS; MMICS;

COMMUNICATION SYSTEMS; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROWAVE DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

MICROWAVES;

EID: 77957809577     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2010.5518245     Document Type: Conference Paper

References (4)

1. J. C. Zolper, "Wide Bandgap Semiconductor Microwave Technologies: From promise to practice," 1999 IEDM Tech. Dig., pp. 289-392, Dec 1999.
2. L. F. Eastman and U. K. Mishra, "The Tourghest Transistor Yet", IEEE Spectrum, vol.39, no 5, pp. 28-33, May 2002.
3. U. K. Mishra et al., "GaN-Based RF Power Devices and Amplifiers," Proceedings of the IEEE., vol.96, no.2, pp. 287-305, Feb 2008.
4. B. A. Kopp, A. J Billups, and M. J Luesse, "Thermal Analysis and Considerations for Gallium Nitride Microwave Power Amplifier Packaging," Microwave Journal, Dec 2001.