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Volumn 31, Issue 4, 2010, Pages 509-514

The electronic structure and optical properties of Al-N codoped ZnO

Author keywords

Al N codoped; Electronic structures; Optical properties; Wurtzite ZnO

Indexed keywords

ACCEPTOR LEVELS; AL-N CODOPING; BAND EDGE; BAND GAPS; CO-DOPED; CO-DOPED ZNO; DOPED SYSTEMS; DOPED ZNO; ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES; FIRST-PRINCIPLES; IONIZATION ENERGIES; N-SOLUBILITY; P TYPE ZNO; PLANE WAVE; RATIO OF AL; RED SHIFT; SUPERCELL MODEL; ULTRASOFT PSEUDOPOTENTIALS; WURTZITES; ZNO;

EID: 77957763410     PISSN: 10007032     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (15)

References (20)
  • 2
    • 0142109458 scopus 로고    scopus 로고
    • Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films
    • Tang Z K, Wong G W L, Yu P, et al. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films [J]. Appl. Phys. Lett., 1998, 72(25):3270-3272.
    • (1998) Appl. Phys. Lett. , vol.72 , Issue.25 , pp. 3270-3272
    • Tang, Z.K.1    Wong, G.W.L.2    Yu, P.3
  • 3
    • 43149119782 scopus 로고    scopus 로고
    • Photoluminescence and formation of ZnO thin filml on n-InP (100) by electrodepasition
    • (in English)
    • Weng Zhankun, Liu Aimin, Liu Yanhong, et al. Photoluminescence and formation of ZnO thin filml on n-InP (100) by electrodepasition [J]. Chin. J. Lumin., 2008, 29(2): 283-288 (in English).
    • (2008) Chin. J. Lumin. , vol.29 , Issue.2 , pp. 283-288
    • Weng, Z.1    Liu, A.2    Liu, Y.3
  • 4
    • 48949116522 scopus 로고    scopus 로고
    • Effect of annealing on optical properties of ZnO thin films
    • (in Chinese)
    • Zhang Xijian, Wang Guoqiang, Wang Qinpu, et al. Effect of annealing on optical properties of ZnO thin films [J]. Chin. J. Lumin., 2008, 29(3):451-454 (in Chinese).
    • (2008) Chin. J. Lumin. , vol.29 , Issue.3 , pp. 451-454
    • Zhang, X.1    Wang, G.2    Wang, Q.3
  • 5
    • 55649083551 scopus 로고    scopus 로고
    • Structural and photoluminescence properties of Nd-doped ZnO thin films grown by RF magnetron sputtering
    • (in Chinese)
    • Wen Jun, Chen Changle. Structural and photoluminescence properties of Nd-doped ZnO thin films grown by RF magnetron sputtering [J]. Chin. J. Lumin., 2008, 29(3):856-860 (in Chinese).
    • (2008) Chin. J. Lumin. , vol.29 , Issue.3 , pp. 856-860
    • Wen, J.1    Chen, C.2
  • 6
    • 25144462707 scopus 로고    scopus 로고
    • A comprehensive review of ZnO materials and devices
    • ÖzgÜr Ü, Ya I Alivov, Liu C, et al. A comprehensive review of ZnO materials and devices [J]. J. Appl. Phys., 2005, 98(4):041301-1-103.
    • (2005) J. Appl. Phys. , vol.98 , Issue.4
    • ÖzgÜr, U.1    Alivov, Y.I.2    Liu, C.3
  • 7
    • 0142075383 scopus 로고    scopus 로고
    • Electrochemical characteristics of alumina dielectric layers
    • Oh H J, Jeong Y, Suh S J, et al. Electrochemical characteristics of alumina dielectric layers [J]. J. Phys. Chem. Solid., 2003, 64(11):2219-2225.
    • (2003) J. Phys. Chem. Solid. , vol.64 , Issue.11 , pp. 2219-2225
    • Oh, H.J.1    Jeong, Y.2    Suh, S.J.3
  • 8
    • 0021479861 scopus 로고
    • Distribution of anions and protons in oxide films formed anodically on aluminum in a phosphate solution
    • Takahashi H, Fujimoto K, Konno H. Distribution of anions and protons in oxide films formed anodically on aluminum in a phosphate solution [J]. J. Electrochem. Soc., 1984, 131(8):1856-1861.
    • (1984) J. Electrochem. Soc. , vol.131 , Issue.8 , pp. 1856-1861
    • Takahashi, H.1    Fujimoto, K.2    Konno, H.3
  • 9
    • 0023119575 scopus 로고
    • Passive behaviour of titanium in alkaline solution
    • Wilhelmsen W, Hurlen T. Passive behaviour of titanium in alkaline solution [J]. Electrochim. Acta, 1987, 32 (1): 85-89.
    • (1987) Electrochim. Acta , vol.32 , Issue.1 , pp. 85-89
    • Wilhelmsen, W.1    Hurlen, T.2
  • 10
    • 0031210180 scopus 로고    scopus 로고
    • Formation of Al/(Ti,Nb,Ta)-composite oxide films on aluminum by pore filling
    • Shikanai M, Sakairi M, Takahashi H, et al. Formation of Al/(Ti,Nb,Ta)-composite oxide films on aluminum by pore filling [J]. J. Electrochem Soc., 1997, 144(8):2756-2766.
    • (1997) J. Electrochem Soc. , vol.144 , Issue.8 , pp. 2756-2766
    • Shikanai, M.1    Sakairi, M.2    Takahashi, H.3
  • 11
    • 0000400999 scopus 로고
    • Deep energy levels of defects in the wurtzite semiconductors AlN, CdS, CdSe, ZnS, and ZnO
    • Kobayashi A, Sankey O F, Dow J D. Deep energy levels of defects in the wurtzite semiconductors AlN, CdS, CdSe, ZnS, and ZnO [J]. Phys. Rev. B, 1983, 28(2):946-956.
    • (1983) Phys. Rev. B , vol.28 , Issue.2 , pp. 946-956
    • Kobayashi, A.1    Sankey, O.F.2    Dow, J.D.3
  • 12
    • 0242534902 scopus 로고    scopus 로고
    • Codoping of wide gap epitaxial III-nitride semiconductors
    • Korotkov R Y, Gregie J M, Wessels B W. Codoping of wide gap epitaxial III-nitride semiconductors [J]. Opto-Electron. Rev., 2002, 10(4):243-248.
    • (2002) Opto-Electron. Rev. , vol.10 , Issue.4 , pp. 243-248
    • Korotkov, R.Y.1    Gregie, J.M.2    Wessels, B.W.3
  • 13
    • 60449087482 scopus 로고    scopus 로고
    • Enhancing hole concentration in AlN by Mg:O codoping: Ab initio study
    • Wu R Q, Shen L, Yang M, et al. Enhancing hole concentration in AlN by Mg:O codoping: Ab initio study [J]. Phys. Rev. B, 2008, 77(7):073203-1-4.
    • (2008) Phys. Rev. B , vol.77 , Issue.7
    • Wu, R.Q.1    Shen, L.2    Yang, M.3
  • 14
    • 0037465329 scopus 로고    scopus 로고
    • Preparation of p-type ZnO films by doping of Be-N bonds
    • Sanmyo M, Tomita Y, Kobayashi K. Preparation of p-type ZnO films by doping of Be-N bonds [J]. Chem. Mater., 2003, 15(4):819-821.
    • (2003) Chem. Mater. , vol.15 , Issue.4 , pp. 819-821
    • Sanmyo, M.1    Tomita, Y.2    Kobayashi, K.3
  • 15
    • 1242285028 scopus 로고    scopus 로고
    • Deposition and elect rical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis
    • Bian J M, Li X M, Gao X D, et al. Deposition and elect rical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis [J]. Appl. Phys. Lett., 2004, 84(4):541-543.
    • (2004) Appl. Phys. Lett. , vol.84 , Issue.4 , pp. 541-543
    • Bian, J.M.1    Li, X.M.2    Gao, X.D.3
  • 16
    • 8644222175 scopus 로고    scopus 로고
    • p-type conduction in N-Al co-doped ZnO thin films
    • Lu J G, Ye Z Z, Zhuge F, et al. p-type conduction in N-Al co-doped ZnO thin films [J]. Appl. Phys. Lett., 2004, 85 (15):3134-3135.
    • (2004) Appl. Phys. Lett. , vol.85 , Issue.15 , pp. 3134-3135
    • Lu, J.G.1    Ye, Z.Z.2    Zhuge, F.3
  • 17
    • 0037171005 scopus 로고    scopus 로고
    • First principles simulation: ideas, illustrations and the CASTEP code
    • Segall M D, Lindan P J D, Probert M J. First principles simulation: ideas, illustrations and the CASTEP code [J]. J. Phys. Cond. Matt., 2002, 14(11):2717-2744.
    • (2002) J. Phys. Cond. Matt. , vol.14 , Issue.11 , pp. 2717-2744
    • Segall, M.D.1    Lindan, P.J.D.2    Probert, M.J.3
  • 18
    • 33646740975 scopus 로고    scopus 로고
    • Influence of postdeposition annealing on the structural and optical properties of cosputtered Mn doped ZnO thin films
    • Harish K Y, Sreenivas K, Vinay G. Influence of postdeposition annealing on the structural and optical properties of cosputtered Mn doped ZnO thin films [J]. J. Appl. Phys., 2006, 99(8):083507-1-8.
    • (2006) J. Appl. Phys. , vol.99 , Issue.8
    • Harish, K.Y.1    Sreenivas, K.2    Vinay, G.3
  • 19
    • 0031072694 scopus 로고    scopus 로고
    • Aluminum nitride and alumina composite film fabricated by DC plasma processes
    • Wang P W, Sui S, Wang W, et al. Aluminum nitride and alumina composite film fabricated by DC plasma processes [J]. Thin Solid Films, 1997, 295(3): 142-146.
    • (1997) Thin Solid Films , vol.295 , Issue.3 , pp. 142-146
    • Wang, P.W.1    Sui, S.2    Wang, W.3
  • 20
    • 20044383271 scopus 로고    scopus 로고
    • Ab initio investigations of optical properties of the high-pressure phases of ZnO
    • Sun J, Wang H T, He J L, et al. Ab initio investigations of optical properties of the high-pressure phases of ZnO [J]. Phys. Rev. B, 2005, 71 (12): 125132-1-5.
    • (2005) Phys. Rev. B , vol.71 , Issue.12
    • Sun, J.1    Wang, H.T.2    He, J.L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.