Enhanced near-infrared response of a-Si:H solar cells with β-NaYF 4:Yb3 (18%), Er3 (2%) upconversion phosphors

Solar Energy Materials and Solar Cells

Volumn 94, Issue 12, 2010, Pages 2395-2398

  De Wild, J ^a   Rath, J K ^a   Meijerink, A ^a   Van Sark, W G J H M ^a   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

a Si:H solar cells; Thin film; Upconversion

Indexed keywords

A-SI:H; A-SI:H SOLAR CELLS; BACK REFLECTORS; BAND GAPS; CURRENT ENHANCEMENT; CURRENT-VOLTAGE MEASUREMENTS; DIODE LASERS; DIRECT ABSORPTION; EXTERNAL QUANTUM EFFICIENCY; HYDROGENATED AMORPHOUS SILICON (A-SI:H); INFRA-RED IRRADIATION; LASER LIGHTS; NEAR INFRARED; NONLINEAR BEHAVIOR; PHOTON UPCONVERSION; PROOF OF PRINCIPLES; THIN FILM SOLAR CELLS; UP-CONVERSION; UPCONVERSION MATERIALS; UPCONVERSION PHOSPHORS;

AMORPHOUS FILMS; AMORPHOUS SILICON; ENERGY GAP; ERBIUM; FLUORESCENT SCREENS; INFRARED DEVICES; LIGHT EMISSION; PHOSPHORS; SOLAR CELLS; THIN FILMS; VAPOR DEPOSITION; YTTERBIUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957656258     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.08.024     Document Type: Article

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