Backside gate thin film transistor based on MOCVD grown ZnO on SiO 2/Si substrates

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2010, Pages 237-238

  Biethan, Jens Peter ^a   Bayraktaroglu, Burhan ^b   Considine, Laurence ^a   Pavlidis, Dimitris ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BIOMEDICAL APPLICATIONS; DOMINANT PROCESS; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL COMPONENTS; EXCITON-BINDING ENERGY; INDUSTRY APPLICATIONS; LARGE SIZES; LASER DIODES; LOW COSTS; MECHANICAL SYSTEMS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; RADIATION HARDNESS; SATURATION VELOCITY; SI SUBSTRATES; TRANSPARENT CONDUCTIVITY; TRANSPARENT DISPLAYS; UV EMISSIONS; WELL-ESTABLISHED TECHNIQUES; ZNO; ZNO LAYERS;

AMORPHOUS SILICON; BINDING ENERGY; CARRIER MOBILITY; CRYSTALLOGRAPHY; ELECTRIC PROPERTIES; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON COMPOUNDS; SILICON OXIDES; SUBSTRATES; THIN FILM TRANSISTORS; THIN FILMS;

ZINC OXIDE;

EID: 77957596049     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551981     Document Type: Conference Paper

References (5)

1. B. Bayraktaroglu et al., Device Research Conforence, p. 237 (2008).
2. B. Bayraktaroglu et al., IEEE Elec. Device Lett., vol. 30, p. 946 (2009).
3. S. J. Lim et al., Appl. Phys. Lett., vol. 91, p. 183517 (2007).
4. J. Zhu et al., Journal of Elec. Mat., vol. 37, No. 9, p. 1237 (2008).
5. J. Jo et al., Appl. Phys. Express., vol. 1, No. 4, p. 041202-1 (2008).