Kinetic Monte Carlo simulation of resistive switching and filament growth in electrochemical RRAMs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2010, Pages 255-256

  Pan, Feng ^a   Subramanian, Vivek ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC-SCALE SIMULATIONS; CHEMICAL PROCESS; CONFIGURABLE LOGIC; FILAMENT MORPHOLOGY; I - V CURVE; ION ADSORPTION; IV CHARACTERISTICS; KINETIC MONTE CARLO METHODS; KINETIC MONTE CARLO SIMULATION; LOW POWER; LOW RESISTANCE; METAL CRYSTALLIZATION; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING;

ADSORPTION; COMPUTER SIMULATION; DESORPTION; FILAMENTS (LAMP); RANDOM ACCESS STORAGE;

MONTE CARLO METHODS;

EID: 77957592834     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551973     Document Type: Conference Paper

References (2)

1. Rainer Waser, et al. Advanced Material 21, p. 2632, 2009.
2. Niemeyer, L et al. Physical Review Letter 52, p.1033, 1984.