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Optoelectronics and Advanced Materials, Rapid Communications

Volumn 4, Issue 8, 2010, Pages 1114-1117

Temperature dependent resistivity and Hall effect in proton irradiated CdS thin films

(9) Ion, L a Ghenescu, V b Iftimie, S a Antohe, V A a Radu, A a Gugiu, M c Velisa, G c Porumb, O a Antohe, S a

a UNIVERSITY OF BUCHAREST (Romania)

b INSTITUTE OF SPACE SCIENCES (Romania)

c HORIA HULUBEI NATIONAL INSTITUTE OF PHYSICS AND NUCLEAR ENGINEERING (Romania)

Author keywords

Cadmium sulfide; Hall effect; Polycrystalline thin films; Proton irradiation

Indexed keywords

CADMIUM SULFIDE; CADMIUM SULFIDE SOLAR CELLS; CADMIUM TELLURIDE; COPPER COMPOUNDS; DEFECTS; HALL EFFECT; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; IONIZING RADIATION; OPTICAL GLASS; OPTOELECTRONIC DEVICES; PROTON IRRADIATION; SELENIUM COMPOUNDS; STAINED GLASS; SUBSTRATES; TECHNOLOGY TRANSFER; THIN FILM SOLAR CELLS; THIN FILMS;

GLASS SUBSTRATES; HETEROJUNCTION SOLAR CELLS; HIGH ENERGY PROTON; POLYCRYSTALLINE; POLYCRYSTALLINE THIN FILM; SPACE TECHNOLOGIES; TEMPERATURE DEPENDENT; TEMPERATURE-DEPENDENT RESISTIVITY;

SULFUR COMPOUNDS;

EID: 77957372472 PISSN: 18426573 EISSN: 20653824 Source Type: Journal
DOI: None Document Type: Article

Times cited : (4)

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