Defects induced by ionizing radiations in AII-BVI pollycrystalline thin films used as solar cell materials

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 5, 2007, Pages 1382-1394

  Antohe, S ^a   Ion, L ^a   Antohe, V A ^a   Ghenescu, M ^a   Alexandru, H ^a  

^a UNIVERSITY OF BUCHAREST   (Romania)

Author keywords

CdS; CdSe; Electrons and protons irradiation; Polycrystalline layers

Indexed keywords

CADMIUM SULFIDE; DEFECTS; ELECTRONICS INDUSTRY; ELECTRONS; ENERGY GAP; II-VI SEMICONDUCTORS; IONIZING RADIATION; IRRADIATION; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; RADIATION SHIELDING; SELENIUM COMPOUNDS; SUBSTRATES; THIN FILM SOLAR CELLS; VACUUM EVAPORATION; ZINC SULFIDE;

CDSE; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL CONDUCTION; POLYCRYSTALLINE LAYERS; PROTONS IRRADIATIONS; SPACE-CHARGE-LIMITED CURRENT; THERMAL-VACUUM EVAPORATION; THERMALLY STIMULATED CURRENT SPECTROSCOPY;

THIN FILMS;

EID: 38549141764     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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