Effects of Zr and Ti doping on the dielectric response of CeO2: A comparative first-principles study

Solid State Communications

Volumn 150, Issue 41-42, 2010, Pages 2020-2022

  Dutta, Gargi ^a   Saha, Srijan Kumar ^a   Waghmare, Umesh V ^b  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

Author keywords

A. Ceria; A. Semiconductor; D. Dielectric constant; E. DFT

Indexed keywords

A-PLANE; A. CERIA; A. SEMICONDUCTOR; CERIA-ZIRCONIA MIXED OXIDES; DIELECTRIC CONSTANTS; DIELECTRIC RESPONSE; E. DFT; FIRST-PRINCIPLES DENSITY FUNCTIONAL THEORY; FIRST-PRINCIPLES STUDY; HIGH-K MATERIALS; PSEUDOPOTENTIALS; SEMICONDUCTOR INDUSTRY; SOFTENING OF PHONON MODES; TI DOPING; ZR-DOPED; ZR-DOPING;

DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; OXYGEN; PERMITTIVITY; SEMICONDUCTOR DEVICE MANUFACTURE; ZIRCONIUM;

CERIUM COMPOUNDS;

EID: 77957284970     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.08.014     Document Type: Article

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