Analytical model for single event burnout of power mosfets

IEEE Transactions on Nuclear Science

Volumn 34, Issue 6, 1987, Pages 1275-1280

  Hohl, Jakob H ^a   Galloway, Kenneth F ^a  

^a UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77957225545     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1987.4337465     Document Type: Article

References (12)

1. C. Hu and M. Chi, “Second Breakdown of Vertical Power MOSFETs,” IEEE Trans. Electron Devices, ED-29(8), p. 1287, 1982.
2. D. L. Blackburn, “Turn-off Failure of Power MOSFETs,” Proc. IEEE PESC ‘85, Toulouse, France, June 24–28, 1985.
3. M. Alexander, “Drain to Source Breakdown and Leakage in Power MOSFETs,” MOSPOWER Applications Handbook, Siliconix Inc. Santa Clara, Cal., 1984.
4. A. E. Waskiewicz, J. W. Groninger, V. H. Strahan and D. M. Long, “Burnout of Power MOS Transistors with Heavy Ions of Californium-252,” IEEE Trans. Nuc. Sci., NS-33, pp. 1710–1713, 1986.
5. S. M. Sze, Physics of Semiconductor Devices, 2nd. ed., John Wiley & Sons, New York, pp. 45–47, 1981.
6. R. A. Colclaser, Microelectronics Processing and Device Design, John Wiley & Sons, New York, pp. 185–189.
7. J. F. Ziegler, Handbook for Stopping Cross Sections for Energetic Ions in all Elements, Vol. 5, Pergamon Press, 1980.
8. R. B. Leighton, Principles of Modern Physics, McGraw-Hill, Hill, p. 494, 1959.
9. R. D. Ryan, “Precision Measurements of the Ionization Energy and its Temperature Variation in High Purity Silicon Radiation Detectors,” IEEE Trans. Nuc. Sci., NS-20, p. 473, 1973.
10. R. C. Martin, N. M. Ghoniem and Y. Song, “Monte Carlo Simulation of Electron-Hole Pair Generation Profiles Along Heavy-Ion Tracks in Semiconductors,” presented at the Fifth Annual Symposium on Single Event Effects, Los Angeles, California. April 7–8, 1987.
11. H. S. Carslaw and J. C. Jaeger, Conduction of Heat in Solids, 2nd Ed., Oxford Univ. Press, New York, 258, 1959.
12. C. Canali, G. Ottaviani and A. Alberigi Quaranta, “Drift Velocity of Electrons and Holes and Associated Anisotropic Effects in Silicon,” J. Phys. Chem. Solids, Vol. 32, pp. 1707–1720, 1971.