BURNOUT OF POWER MOS TRANSISTORS WITH HEAVY IONS OF CALIFORNIUM-252.

IEEE Transactions on Nuclear Science

Volumn NS-33, Issue 6, 1986, Pages

  Waskiewicz, A E ^a   Groninger, J W ^a   Strahan, V H ^a   Long, D M ^a  

^a Rockwell International   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT - RADIATION EFFECTS;

BURNOUT SUSCEPTIBILITY; HEAVY ION RADIATION; POWER MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022921353     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)