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Volumn 82, Issue 3, 2010, Pages

Electron affinity of indium and the fine structure of In- measured using infrared photodetachment threshold spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords

CROSS SECTION; FINE STRUCTURES; FINE-STRUCTURE LEVELS; NEUTRAL ATOMS; PHOTODETACHMENT THRESHOLDS; PHOTON ENERGY RANGE; THEORETICAL CALCULATIONS;

EID: 77957137098     PISSN: 10502947     EISSN: 10941622     Source Type: Journal    
DOI: 10.1103/PhysRevA.82.032507     Document Type: Article
Times cited : (29)

References (27)
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    • A reanalysis of the data in Ref. [26] by H. Hotop (unpublished; cited in Ref. 9) accounting for the effects of fine structure yielded a value of 410(40)meV for the electron affinity of Ga.
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