Composition dependence of crystal structure and electrical properties for epitaxial films of Bi(Zn1/2Ti1/2)O3-BiFeO 3 solid solution system

Journal of the Ceramic Society of Japan

Volumn 118, Issue 1380, 2010, Pages 659-663

  Yazawa, Keisuke ^a   Yasui, Shintaro ^a   Morioka, Hitoshi ^a,b   Yamada, Tomoaki ^a   Uchida, Hiroshi ^c   Gruverman, Alexei ^d   Funakubo, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b BRUKER AXS INC   (United States)

^c SOPHIA UNIVERSITY   (Japan)

^d UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

Bi(Zn1 2; Composition dependency; Crystal structure; Electric property; Epitaxial film; Lead free material; MOCVD; Solid solution; Ti1 2)O3 BiFeO3

Indexed keywords

BISMUTH COMPOUNDS; ELECTRIC PROPERTIES; EPITAXIAL FILMS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SOLID SOLUTIONS; TITANIUM; ZINC;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); COMPOSITION DEPENDENCE; COMPOSITION DEPENDENCY; LEAD-FREE MATERIAL; MEASUREMENT TEMPERATURES; RELATIVE DIELECTRIC CONSTANT; RHOMBOHEDRAL SYMMETRY; SOLID SOLUTION SYSTEM;

CRYSTAL STRUCTURE;

EID: 77956902578     PISSN: 18820743     EISSN: 13486535     Source Type: Journal    
DOI: 10.2109/jcersj2.118.659     Document Type: Article

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