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Journal of Applied Physics

Volumn 108, Issue 5, 2010, Pages

Field-induced hot-electron emission model for wide-band-gap semiconductor nanostructures

(5) Zeng, J Z a Deng, S Z a She, J C a He, H a Xu, N S a

a SUN YAT SEN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BULK STRUCTURE; EMISSION CURRENT DENSITY; EXPERIMENTAL OBSERVATION; EXTERNAL FIELDS; FIELD ENHANCEMENT FACTOR; FOWLER-NORDHEIM; HEATING EFFECT; NONLINEAR PROPERTIES; SATURATION REGION; THEORETICAL MODELS; THERMAL EMISSIONS; WIDE-BAND-GAP SEMICONDUCTOR; ZNO NANOSTRUCTURES;

FIELD EMISSION; FIELD EMISSION CATHODES; HOT ELECTRONS; NANOSTRUCTURES; THERMIONIC EMISSION; ZINC OXIDE;

ELECTRON TEMPERATURE;

EID: 77956804537 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3481061 Document Type: Article

Times cited : (11)

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