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Volumn 30, Issue C, 1997, Pages

Transport Phenomena in Czochralski Crystal Growth Processes

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EID: 77956723990     PISSN: 00652717     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0065-2717(08)70254-5     Document Type: Article
Times cited : (37)

References (184)
  • 1
    • 0001668444 scopus 로고
    • Ein neues verfahren zue messung der kristallisation-geschwindigkeit der metalle. Z
    • Czochralski J. Ein neues verfahren zue messung der kristallisation-geschwindigkeit der metalle. Z. Phys. Chem. 92 (1918) 219-221
    • (1918) Phys. Chem. , vol.92 , pp. 219-221
    • Czochralski, J.1
  • 3
    • 0002138247 scopus 로고
    • Czochralski growth
    • Hurle D.T.J. (Ed), North-Holland, New York
    • Hurle D.T.J., and Cockayne B. Czochralski growth. In: Hurle D.T.J. (Ed). Handbook of Crystal Growth 2a (1994), North-Holland, New York 99-211
    • (1994) Handbook of Crystal Growth , vol.2 a , pp. 99-211
    • Hurle, D.T.J.1    Cockayne, B.2
  • 4
    • 0019741805 scopus 로고
    • Convection in Czochralski growth melts
    • Langlois W.E. Convection in Czochralski growth melts. PCH, PhysicoChem. Hydrodyn. 2 (1981) 245-261
    • (1981) PCH, PhysicoChem. Hydrodyn. , vol.2 , pp. 245-261
    • Langlois, W.E.1
  • 5
    • 3843116560 scopus 로고
    • Interactions between convection, segregation and interface morphology
    • Dryburgh P.M., Cockayne B., and Barraclough K.G. (Eds), Prentice-Hall, Englewood Cliffs, NJ
    • Brown R.A. Interactions between convection, segregation and interface morphology. In: Dryburgh P.M., Cockayne B., and Barraclough K.G. (Eds). Advanced Crystal Growth (1986), Prentice-Hall, Englewood Cliffs, NJ 3-94
    • (1986) Advanced Crystal Growth , pp. 3-94
    • Brown, R.A.1
  • 6
    • 0041713294 scopus 로고
    • Convection and inhomogeneities in crystal growth from melt
    • Freyhardt H.C. (Ed), Springer-Verlag, Berlin
    • Müller G. Convection and inhomogeneities in crystal growth from melt. In: Freyhardt H.C. (Ed). Crystals 12 (1988), Springer-Verlag, Berlin
    • (1988) Crystals , vol.12
    • Müller, G.1
  • 7
    • 0000564728 scopus 로고
    • Modelling Bridgman and Czochralski growth
    • Hurle D.T.J. (Ed), North-Holland, New York
    • Dupret F., and van den Bogaert N. Modelling Bridgman and Czochralski growth. In: Hurle D.T.J. (Ed). Handbook of Crystal Growth 2b (1994), North-Holland, New York 875-1010
    • (1994) Handbook of Crystal Growth , vol.2 b , pp. 875-1010
    • Dupret, F.1    van den Bogaert, N.2
  • 9
    • 0000764773 scopus 로고
    • The growth of germanium single crystals
    • Teal G.K., and Little J.B. The growth of germanium single crystals. Phys. Rev. 78 (1950) 647
    • (1950) Phys. Rev. , vol.78 , pp. 647
    • Teal, G.K.1    Little, J.B.2
  • 10
    • 0000504080 scopus 로고
    • The growth of germanium single crystals and of single silicon p-n junctions
    • Teal G.K., and Buehler E. The growth of germanium single crystals and of single silicon p-n junctions. Phys. Rev. 87 (1952) 190
    • (1952) Phys. Rev. , vol.87 , pp. 190
    • Teal, G.K.1    Buehler, E.2
  • 11
    • 0004473906 scopus 로고
    • Computational simulation of the melt flow during Czochralski growth
    • Kobayashi N. Computational simulation of the melt flow during Czochralski growth. J. Cryst. Growth 43 (1978) 357-363
    • (1978) J. Cryst. Growth , vol.43 , pp. 357-363
    • Kobayashi, N.1
  • 12
    • 0000149802 scopus 로고
    • An experimental model of the flow in Czorhralski growth
    • Jones A.D.W. An experimental model of the flow in Czorhralski growth. J. Cryst. Growth 61 (1983) 235-244
    • (1983) J. Cryst. Growth , vol.61 , pp. 235-244
    • Jones, A.D.W.1
  • 13
    • 0000339493 scopus 로고
    • The dissolution of fused silica in molten silicon
    • Chaney R.E., and Varker C.J. The dissolution of fused silica in molten silicon. J. Cryst. Growth 33 (1976) 188-190
    • (1976) J. Cryst. Growth , vol.33 , pp. 188-190
    • Chaney, R.E.1    Varker, C.J.2
  • 14
    • 0038215148 scopus 로고
    • Oxygen content of silicon single crystals
    • Kaiser W.K., and Kech P.H. Oxygen content of silicon single crystals. J. Appl. Phys. 28 (1957) 882-887
    • (1957) J. Appl. Phys. , vol.28 , pp. 882-887
    • Kaiser, W.K.1    Kech, P.H.2
  • 15
    • 77956789174 scopus 로고
    • Growth, properties and applications
    • Grabmaier J.G. (Ed), Springer-Verlag, New York
    • Cizsek T.F. Growth, properties and applications. In: Grabmaier J.G. (Ed). Crystals 5 (1981), Springer-Verlag, New York
    • (1981) Crystals , vol.5
    • Cizsek, T.F.1
  • 16
    • 0026819886 scopus 로고
    • Instabilities, transition, and turbulence in the Czochralski crystal melt
    • Ristorcelli J.R., and Lumley J.L. Instabilities, transition, and turbulence in the Czochralski crystal melt. J. Cryst. Growth 116 (1992) 447-460
    • (1992) J. Cryst. Growth , vol.116 , pp. 447-460
    • Ristorcelli, J.R.1    Lumley, J.L.2
  • 17
    • 33847446049 scopus 로고
    • Simulated optical radiation in ruby
    • Maiman T.H. Simulated optical radiation in ruby. Nature (London) 187 (1960) 493-494
    • (1960) Nature (London) , vol.187 , pp. 493-494
    • Maiman, T.H.1
  • 18
    • 0000178682 scopus 로고
    • Continuous operation of a solid-state optical laser
    • Johnson L.F., Boyd G.D., Nassau K., and Soden R.R. Continuous operation of a solid-state optical laser. Phys. Rev. 126 (1962) 1406-1409
    • (1962) Phys. Rev. , vol.126 , pp. 1406-1409
    • Johnson, L.F.1    Boyd, G.D.2    Nassau, K.3    Soden, R.R.4
  • 20
    • 0000462739 scopus 로고
    • The melt growth of oxide and related single crystals
    • Cockayne B. The melt growth of oxide and related single crystals. J. Cryst. Growth 42 (1977) 413-426
    • (1977) J. Cryst. Growth , vol.42 , pp. 413-426
    • Cockayne, B.1
  • 21
    • 0027151331 scopus 로고
    • InP-based microelectronics pilot line for commercial and military applications
    • IEEE, New York
    • Greiling, P. T., (1993). InP-based microelectronics pilot line for commercial and military applications. Proc. 5th Int. Conf. InP Relat. Mater., pp. 3-6, IEEE, New York.
    • (1993) Proc. 5th Int. Conf. InP Relat. Mater , pp. 3-6
    • Greiling, P.T.1
  • 22
    • 0027556859 scopus 로고
    • MLEK crystal growth of large diameter (100) indium phosphide
    • Bliss D.F., Hilton R.M., and Adamski J.A. MLEK crystal growth of large diameter (100) indium phosphide. J. Cryst. Growth 128 (1993) 451-456
    • (1993) J. Cryst. Growth , vol.128 , pp. 451-456
    • Bliss, D.F.1    Hilton, R.M.2    Adamski, J.A.3
  • 23
    • 0027308546 scopus 로고
    • Perspectives of the VGF growth processes for preparation of low-defect InP substrate crystals
    • IEEE, New York
    • Müller, G., Hofmann, D., and Scháfer, N., (1993). Perspectives of the VGF growth processes for preparation of low-defect InP substrate crystals. Proc 5th Int. Conf. InP Relat. Mater., pp. 60-65, IEEE, New York.
    • (1993) Proc 5th Int. Conf. InP Relat. Mater , pp. 60-65
    • Müller, G.1    Hofmann, D.2    Scháfer, N.3
  • 24
    • 0030562058 scopus 로고    scopus 로고
    • Growth of long-length 3 inch diameter Fe-doped InP single crystals
    • Kohiro K., Ohta M., and Oda O. Growth of long-length 3 inch diameter Fe-doped InP single crystals. J. Cryst. Growth 158 (1996) 197-204
    • (1996) J. Cryst. Growth , vol.158 , pp. 197-204
    • Kohiro, K.1    Ohta, M.2    Oda, O.3
  • 26
    • 0028498370 scopus 로고
    • Thermal characterization of the high pressure crystal growth system for in-situ synthesis and growth of InP crystals
    • Prasad V., Bliss D.F., and Adamski J.A. Thermal characterization of the high pressure crystal growth system for in-situ synthesis and growth of InP crystals. J. Cryst. Growth 142 (1994) 21-30
    • (1994) J. Cryst. Growth , vol.142 , pp. 21-30
    • Prasad, V.1    Bliss, D.F.2    Adamski, J.A.3
  • 27
    • 0029390546 scopus 로고
    • A multizone adaptive process model for low and high pressure crystal growth
    • Zhang H., and Prasad V. A multizone adaptive process model for low and high pressure crystal growth. J. Cryst. Growth 155 (1995) 47-65
    • (1995) J. Cryst. Growth , vol.155 , pp. 47-65
    • Zhang, H.1    Prasad, V.2
  • 28
    • 0030566296 scopus 로고    scopus 로고
    • Transport phenomena in high pressure crystal growth systems for III-V compounds
    • Zhang H., Prasad V., and Bliss D.F. Transport phenomena in high pressure crystal growth systems for III-V compounds. J. Cryst. Growth 169 (1996) 250-260
    • (1996) J. Cryst. Growth , vol.169 , pp. 250-260
    • Zhang, H.1    Prasad, V.2    Bliss, D.F.3
  • 29
    • 0030403674 scopus 로고    scopus 로고
    • Nunes, E. M., Naraghi, M. H. N., Zhang, H., and Prasad, V., (1996). Combined radiative-convection modeling for materials processes: Application to crystal growth. Proc. 31st Natl. Heat Transfer Conf., Houston, TX, ASME HTD-323, 27-37, New York.
    • Nunes, E. M., Naraghi, M. H. N., Zhang, H., and Prasad, V., (1996). Combined radiative-convection modeling for materials processes: Application to crystal growth. Proc. 31st Natl. Heat Transfer Conf., Houston, TX, ASME HTD-Vol. 323, 27-37, New York.
  • 30
    • 0027626316 scopus 로고
    • Numerical and experimental study of a solid pellet feed continuous Czochralski growth process for silicon single crystals
    • Anselmo A.P., Prasad V., Koziol J., and Gupta K.P. Numerical and experimental study of a solid pellet feed continuous Czochralski growth process for silicon single crystals. J. Cryst. Growth 131 (1993) 247-264
    • (1993) J. Cryst. Growth , vol.131 , pp. 247-264
    • Anselmo, A.P.1    Prasad, V.2    Koziol, J.3    Gupta, K.P.4
  • 31
    • 0015300220 scopus 로고
    • The prediction of laminarization with a two-equation model of turbulence
    • Jones W.P., and Launder B.E. The prediction of laminarization with a two-equation model of turbulence. Int. J. Heat Mass Transfer 15 (1972) 301-314
    • (1972) Int. J. Heat Mass Transfer , vol.15 , pp. 301-314
    • Jones, W.P.1    Launder, B.E.2
  • 32
    • 0001108144 scopus 로고
    • Analytic methods for the development of Reynolds-stress closures in turbulence
    • Speziale C.G. Analytic methods for the development of Reynolds-stress closures in turbulence. Annu. Rev. Fluid Mech. 23 (1991) 107-157
    • (1991) Annu. Rev. Fluid Mech. , vol.23 , pp. 107-157
    • Speziale, C.G.1
  • 33
  • 34
    • 0027904378 scopus 로고
    • Quantitative assessment of an integrated hydrodynamic thermal-capillary model for large-diameter Czochralski growth of silicon: Comparison of predicted temperature field with experiment
    • Kinney T.A., Bornside D.E., and Brown R.A. Quantitative assessment of an integrated hydrodynamic thermal-capillary model for large-diameter Czochralski growth of silicon: Comparison of predicted temperature field with experiment. J. Cryst. Growth 126 (1993) 413-434
    • (1993) J. Cryst. Growth , vol.126 , pp. 413-434
    • Kinney, T.A.1    Bornside, D.E.2    Brown, R.A.3
  • 35
    • 0027906416 scopus 로고
    • Application of turbulence modeling to the integrated hydrodynamic thermal-capillary model of Czochralski crystal growth of silicon
    • Kinney T.A., and Brown R.A. Application of turbulence modeling to the integrated hydrodynamic thermal-capillary model of Czochralski crystal growth of silicon. J. Cryst. Growth 132 (1993) 551-574
    • (1993) J. Cryst. Growth , vol.132 , pp. 551-574
    • Kinney, T.A.1    Brown, R.A.2
  • 36
    • 0030406589 scopus 로고    scopus 로고
    • Zhang, T., Ladeinde, F., Zhang, H., and Prasad, V., (1996). A comparison of turbulence models for natural convection in enclosures: Applications to crystal growth processes. Proc. 31st Natl. Heat Transfer Conf., Houston, TX, ASME HTD-323, pp. 17-26, New York.
    • Zhang, T., Ladeinde, F., Zhang, H., and Prasad, V., (1996). A comparison of turbulence models for natural convection in enclosures: Applications to crystal growth processes. Proc. 31st Natl. Heat Transfer Conf., Houston, TX, ASME HTD-Vol. 323, pp. 17-26, New York.
  • 37
    • 0006159444 scopus 로고
    • Striated solute distributions produced by temperature oscillations during crystal growth from the melt
    • Hurle D.T.J., Jakeman E., and Pike E.R. Striated solute distributions produced by temperature oscillations during crystal growth from the melt. J. Cryst. Growth 3 (1969) 633-640
    • (1969) J. Cryst. Growth , vol.3 , pp. 633-640
    • Hurle, D.T.J.1    Jakeman, E.2    Pike, E.R.3
  • 38
    • 0026412527 scopus 로고
    • Oxygen transport under an axial magnetic field in Czochralski silicon growth
    • Kobayashi N. Oxygen transport under an axial magnetic field in Czochralski silicon growth. J. Cryst. Growth 108 (1991) 240-246
    • (1991) J. Cryst. Growth , vol.108 , pp. 240-246
    • Kobayashi, N.1
  • 39
    • 0026839459 scopus 로고
    • Oxygen partitioning analysis during Czochralski silicon crystal growth via a dopant marker and a simple transfer function modeling technique. II. Growth velocity and applied magnetic field transients
    • Yen C.T., and Tiller W.A. Oxygen partitioning analysis during Czochralski silicon crystal growth via a dopant marker and a simple transfer function modeling technique. II. Growth velocity and applied magnetic field transients. J. Cryst. Growth 118 (1992) 85-92
    • (1992) J. Cryst. Growth , vol.118 , pp. 85-92
    • Yen, C.T.1    Tiller, W.A.2
  • 41
    • 0020990340 scopus 로고
    • Convective transport in melt growth systems
    • Hurle D.T.J. Convective transport in melt growth systems. J. Cryst. Growth 65 (1983) 124-132
    • (1983) J. Cryst. Growth , vol.65 , pp. 124-132
    • Hurle, D.T.J.1
  • 42
    • 36849125451 scopus 로고
    • The distribution of solute in crystals grown from the melt. Part I. Theoretical
    • Burton J.A., Prim P.C., and Slichter W.P. The distribution of solute in crystals grown from the melt. Part I. Theoretical. J. Chem. Phys. 21 11 (1953) 1987-1991
    • (1953) J. Chem. Phys. , vol.21 , Issue.11 , pp. 1987-1991
    • Burton, J.A.1    Prim, P.C.2    Slichter, W.P.3
  • 43
    • 0040765352 scopus 로고
    • Distribution of solute in crystals grown from the melt. Part II. Experimental
    • Burton J.A., Kolb E.D., Slichter W.P., and Struthers J.O. Distribution of solute in crystals grown from the melt. Part II. Experimental. J. Chem. Phys. 21 11 (1953) 1991-1996
    • (1953) J. Chem. Phys. , vol.21 , Issue.11 , pp. 1991-1996
    • Burton, J.A.1    Kolb, E.D.2    Slichter, W.P.3    Struthers, J.O.4
  • 44
    • 0038781891 scopus 로고
    • A new look at Burton, Prim and Slichter model of segregation during crystal growth from the melt
    • Wilson L.O. A new look at Burton, Prim and Slichter model of segregation during crystal growth from the melt. J. Cryst. Growth 44 (1978) 371-376
    • (1978) J. Cryst. Growth , vol.44 , pp. 371-376
    • Wilson, L.O.1
  • 45
    • 0039449087 scopus 로고
    • The effect of fluctuating growth rates on segregation in crystals grown from the melt
    • Wilson L.O. The effect of fluctuating growth rates on segregation in crystals grown from the melt. J. Cryst. Growth 48 (1980) 435-450
    • (1980) J. Cryst. Growth , vol.48 , pp. 435-450
    • Wilson, L.O.1
  • 47
    • 0001055195 scopus 로고
    • Convection in melt growth
    • Hurle D.T.J. (Ed), North-Holland, New York
    • Müller G., and Ostrogorsky A. Convection in melt growth. In: Hurle D.T.J. (Ed). Handbook of Crystal Growth 2b (1994), North-Holland, New York 709-819
    • (1994) Handbook of Crystal Growth , vol.2 b , pp. 709-819
    • Müller, G.1    Ostrogorsky, A.2
  • 48
    • 0039449043 scopus 로고
    • A test of the boundary layer model in unsteady Czochralski growth
    • Favier J.J., and Wilson L.O. A test of the boundary layer model in unsteady Czochralski growth. J. Cryst. Growth 58 (1982) 103
    • (1982) J. Cryst. Growth , vol.58 , pp. 103
    • Favier, J.J.1    Wilson, L.O.2
  • 49
    • 0000098147 scopus 로고
    • Segregation phenomena in crystal growth from the melt
    • Hurle D.T.J. (Ed), North-Holland, New York
    • Garandet J.P., Favier J.J., and Camel D. Segregation phenomena in crystal growth from the melt. In: Hurle D.T.J. (Ed). Handbook of Crystal Growth 2b (1994), North-Holland, New York 659-707
    • (1994) Handbook of Crystal Growth , vol.2 b , pp. 659-707
    • Garandet, J.P.1    Favier, J.J.2    Camel, D.3
  • 50
    • 0024738870 scopus 로고
    • Species transport in magnetic field Czochralski growth
    • Riley N. Species transport in magnetic field Czochralski growth. J. Cryst. Growth 97 (1989) 76-84
    • (1989) J. Cryst. Growth , vol.97 , pp. 76-84
    • Riley, N.1
  • 51
    • 0027904387 scopus 로고
    • Hydro-magnetic flows and effects on Czochralski silicon crystals
    • Langlois W.E., Kim K.M., and Walker J.S. Hydro-magnetic flows and effects on Czochralski silicon crystals. J. Cryst. Growth 126 (1993) 352-372
    • (1993) J. Cryst. Growth , vol.126 , pp. 352-372
    • Langlois, W.E.1    Kim, K.M.2    Walker, J.S.3
  • 52
    • 0028413763 scopus 로고
    • A numerical study on oxygen transport in silicon melt in a double-crucible method
    • Ono N., Kida M., Arai Y., and Sahira K. A numerical study on oxygen transport in silicon melt in a double-crucible method. J. Cryst. Growth 137 (1994) 427-434
    • (1994) J. Cryst. Growth , vol.137 , pp. 427-434
    • Ono, N.1    Kida, M.2    Arai, Y.3    Sahira, K.4
  • 53
    • 0001686545 scopus 로고
    • The effect of a magnetic field on transport phenomena in a Bridgman-stockbarger crystal growth
    • Oreper G.M., and Szekely J. The effect of a magnetic field on transport phenomena in a Bridgman-stockbarger crystal growth. J. Cryst. Growth 67 (1984) 405-419
    • (1984) J. Cryst. Growth , vol.67 , pp. 405-419
    • Oreper, G.M.1    Szekely, J.2
  • 54
    • 0023414349 scopus 로고
    • Melt motion in a Czochralski crystal puller with an axial magnetic field: Motion due to buoyancy and thermocapillarity
    • Hjellming L.N., and Walker J.S. Melt motion in a Czochralski crystal puller with an axial magnetic field: Motion due to buoyancy and thermocapillarity. J. Fluid Mech. 182 (1987) 335-368
    • (1987) J. Fluid Mech. , vol.182 , pp. 335-368
    • Hjellming, L.N.1    Walker, J.S.2
  • 55
    • 0026205111 scopus 로고
    • The use of magnetic fields in semiconductor crystal growth
    • Series R.W., and Hurle D.T.J. The use of magnetic fields in semiconductor crystal growth. J. Cryst. Growth 113 (1991) 305-328
    • (1991) J. Cryst. Growth , vol.113 , pp. 305-328
    • Series, R.W.1    Hurle, D.T.J.2
  • 56
    • 0024960055 scopus 로고
    • A comparison of order-of-magnitude and numerical analysis of flow phenomena in Czochralski and magnetic Czochralski systems
    • Cartwright R., Ilegbusi O.J., and Szekely J. A comparison of order-of-magnitude and numerical analysis of flow phenomena in Czochralski and magnetic Czochralski systems. J. Cryst. Growth 94 (1989) 321-333
    • (1989) J. Cryst. Growth , vol.94 , pp. 321-333
    • Cartwright, R.1    Ilegbusi, O.J.2    Szekely, J.3
  • 57
    • 0027473520 scopus 로고
    • Buoyancy-driven convection with a uniform magnetic field. Part 1. Asymptotic analysis
    • Alboussiere T., Garandet J.P., and Moreau R. Buoyancy-driven convection with a uniform magnetic field. Part 1. Asymptotic analysis. J. Fluid Mech. 253 (1993) 545-563
    • (1993) J. Fluid Mech. , vol.253 , pp. 545-563
    • Alboussiere, T.1    Garandet, J.P.2    Moreau, R.3
  • 58
    • 0027392733 scopus 로고
    • The use of magnetohydrodynamic effects to investigate fluid flow in electrically conducting melt
    • Baumgartl J., Hubert A., and Müller G. The use of magnetohydrodynamic effects to investigate fluid flow in electrically conducting melt. Phys. Fluids A 5 (1993) 3280-3289
    • (1993) Phys. Fluids A , vol.5 , pp. 3280-3289
    • Baumgartl, J.1    Hubert, A.2    Müller, G.3
  • 59
    • 0027950702 scopus 로고
    • Convection transport phenomena and macro-segregation during solidification of a binary metal alloy. I. Numerical predictions
    • Prescott P.J., and Incorpera F.P. Convection transport phenomena and macro-segregation during solidification of a binary metal alloy. I. Numerical predictions. J. Heat Transfer 116 (1994) 735-741
    • (1994) J. Heat Transfer , vol.116 , pp. 735-741
    • Prescott, P.J.1    Incorpera, F.P.2
  • 60
    • 77956730660 scopus 로고    scopus 로고
    • Zhang, H., and Prasad, V., (1995). Transport Phenomena of Czochralski crystal growth in low and high pressure. Proc. ISHMT-ASME Heat Mass Transfer Conf., 2nd Surathkal, Mangalore, India, pp. 409-415. Tata-McGraw Hill, Bombay.
    • Zhang, H., and Prasad, V., (1995). Transport Phenomena of Czochralski crystal growth in low and high pressure. Proc. ISHMT-ASME Heat Mass Transfer Conf., 2nd Surathkal, Mangalore, India, pp. 409-415. Tata-McGraw Hill, Bombay.
  • 61
    • 0030402244 scopus 로고    scopus 로고
    • Zhang, H., and Prasad, V., (1996). Effect of an applied magnetic field on buoyancy-driven flows in an enclosure. Proc. 31st Natl. Heat Transfer Conf., Houston, TX, ASME HTD-324, 193-201, New York.
    • Zhang, H., and Prasad, V., (1996). Effect of an applied magnetic field on buoyancy-driven flows in an enclosure. Proc. 31st Natl. Heat Transfer Conf., Houston, TX, ASME HTD-Vol. 324, 193-201, New York.
  • 62
    • 0024755284 scopus 로고
    • The effect of the direction of the external magnetic field on the three-dimensional natural convection in a cubical enclosure
    • Ozoe H., and Okada K. The effect of the direction of the external magnetic field on the three-dimensional natural convection in a cubical enclosure. Int. J. Heat Mass Transfer 32 10 (1989) 1939-1954
    • (1989) Int. J. Heat Mass Transfer , vol.32 , Issue.10 , pp. 1939-1954
    • Ozoe, H.1    Okada, K.2
  • 63
    • 0028498923 scopus 로고
    • Combined effects of crucible rotation and horizontal magnetic field on dopant concentration in a Czochralski melt
    • Ozoe H., and Iwamoto M. Combined effects of crucible rotation and horizontal magnetic field on dopant concentration in a Czochralski melt. J. Cryst. Growth 142 (1994) 236-244
    • (1994) J. Cryst. Growth , vol.142 , pp. 236-244
    • Ozoe, H.1    Iwamoto, M.2
  • 64
    • 0001158288 scopus 로고
    • Crystal growth mechanisms
    • Hurle D.T.J. (Ed), North-Holland, New York
    • van der Eerden J.P. Crystal growth mechanisms. In: Hurle D.T.J. (Ed). Handbook of Crystal Growth 1a (1994), North-Holland, New York 307-475
    • (1994) Handbook of Crystal Growth , vol.1 a , pp. 307-475
    • van der Eerden, J.P.1
  • 65
    • 0020737404 scopus 로고
    • Melting and solidification with internal radiative transfer- a generalized phase change model
    • Chan S.H., Cho D.H., and Kocamustafaogullari G. Melting and solidification with internal radiative transfer- a generalized phase change model. Int. J. Heat Mass Transfer 26 4 (1983) 621-633
    • (1983) Int. J. Heat Mass Transfer , vol.26 , Issue.4 , pp. 621-633
    • Chan, S.H.1    Cho, D.H.2    Kocamustafaogullari, G.3
  • 66
    • 0029135481 scopus 로고
    • Numerical simulation of hot-dip metallic coating process
    • Zhang H., and Moallemi M.K. Numerical simulation of hot-dip metallic coating process. Int. J. Heat Mass Transfer 38 2 (1995) 241-257
    • (1995) Int. J. Heat Mass Transfer , vol.38 , Issue.2 , pp. 241-257
    • Zhang, H.1    Moallemi, M.K.2
  • 67
    • 0030701752 scopus 로고
    • A solution adaptive scheme for deformable free surface flow and heat transfer problems. Natl
    • Portland, OR, ASME HTD
    • Zhang, H., Prasad, V., and Moallemi, M. K., (1995). A solution adaptive scheme for deformable free surface flow and heat transfer problems. Natl. Heat Transfer Conf., Portland, OR, ASME HTD-Vol. 311, pp. 119-127.
    • (1995) Heat Transfer Conf , vol.311 , pp. 119-127
    • Zhang, H.1    Prasad, V.2    Moallemi, M.K.3
  • 68
    • 0006490277 scopus 로고
    • Multizone adaptive simulations for high pressure crystal growth
    • ASME/JSME, Maui, Hawaii, pp
    • Zhang, H., and Prasad, V., (1995). Multizone adaptive simulations for high pressure crystal growth. ASME/JSME Therm. Eng. J. Conf., Maui, Hawaii, pp. 559-568.
    • (1995) Therm. Eng. J. Conf , pp. 559-568
    • Zhang, H.1    Prasad, V.2
  • 69
    • 0006462248 scopus 로고
    • Numerical simulation of the Czochralski growth
    • Chan Y.T., Gibeling H.J., and Grubin H.L. Numerical simulation of the Czochralski growth. J. Appl. Phys. 64 (1988) 1425-1439
    • (1988) J. Appl. Phys. , vol.64 , pp. 1425-1439
    • Chan, Y.T.1    Gibeling, H.J.2    Grubin, H.L.3
  • 70
    • 0024909987 scopus 로고
    • Numerical simulation of the Czochralski bulk flow of silicon on a domain confined by a moving crystal melt interface and curved melt-gas meniscus
    • Kopetsch H. Numerical simulation of the Czochralski bulk flow of silicon on a domain confined by a moving crystal melt interface and curved melt-gas meniscus. PCH, PhysicoChem. Hydrodyn. 11 3 (1989) 357-375
    • (1989) PCH, PhysicoChem. Hydrodyn. , vol.11 , Issue.3 , pp. 357-375
    • Kopetsch, H.1
  • 71
    • 0024032235 scopus 로고
    • Theory of transport processes in single crystal growth from the melt
    • Brown R.A. Theory of transport processes in single crystal growth from the melt. AIChE J. 43 6 (1988) 881-911
    • (1988) AIChE J. , vol.43 , Issue.6 , pp. 881-911
    • Brown, R.A.1
  • 72
    • 0006131439 scopus 로고
    • FACET, A radiation view factor computer code for axisymmetric, 2D planar and 3D geometries with shadowing
    • Shapiro A.B. FACET, A radiation view factor computer code for axisymmetric, 2D planar and 3D geometries with shadowing. Lawrence Livermore Lab. [Rep.] UCID UCID-19887 (1983)
    • (1983) Lawrence Livermore Lab. [Rep.] UCID , vol.UCID-19887
    • Shapiro, A.B.1
  • 73
    • 0023384857 scopus 로고
    • Radiative heat exchange in Czochralski crystal growth
    • Atherton L.J., Derby J.J., and Brown R.A. Radiative heat exchange in Czochralski crystal growth. J. Cryst. Growth 84 (1987) 57-78
    • (1987) J. Cryst. Growth , vol.84 , pp. 57-78
    • Atherton, L.J.1    Derby, J.J.2    Brown, R.A.3
  • 75
    • 0028436457 scopus 로고
    • Heat Transfer and interface inversion during the Czochralski growth of yttrium aluminum garnet and gandolinium gallium garnet
    • Xiao Q., and Derby J.J. Heat Transfer and interface inversion during the Czochralski growth of yttrium aluminum garnet and gandolinium gallium garnet. J. Cryst. Growth 139 (1994) 147-157
    • (1994) J. Cryst. Growth , vol.139 , pp. 147-157
    • Xiao, Q.1    Derby, J.J.2
  • 79
    • 0040894131 scopus 로고
    • Simulation of temperature distribution in crystals grown by Czochralski method
    • Ramachandran P.A., and Dudukovič M.P. Simulation of temperature distribution in crystals grown by Czochralski method. J. Cryst. Growth 71 (1985) 399-408
    • (1985) J. Cryst. Growth , vol.71 , pp. 399-408
    • Ramachandran, P.A.1    Dudukovič, M.P.2
  • 80
    • 36549060646 scopus 로고
    • Thermoelastic analysis of GaAs in LEC growth configuration
    • Motakef S., and Witt A.F. Thermoelastic analysis of GaAs in LEC growth configuration. J. Cryst. Growth 80 (1987) 37-50
    • (1987) J. Cryst. Growth , vol.80 , pp. 37-50
    • Motakef, S.1    Witt, A.F.2
  • 81
    • 0024014841 scopus 로고
    • A continuous exchange factor method for radiative exchange in enclosures with participating media
    • Naraghi M.H.N., Chung B.T.F., and Litkouhi B. A continuous exchange factor method for radiative exchange in enclosures with participating media. J. Heat Transfer 110 2 (1988) 456-462
    • (1988) J. Heat Transfer , vol.110 , Issue.2 , pp. 456-462
    • Naraghi, M.H.N.1    Chung, B.T.F.2    Litkouhi, B.3
  • 82
    • 3643120471 scopus 로고
    • Radiative transfer in rectangular enclosures: A discretized exchange factor solution
    • Naraghi M.H.N., and Kassemi M. Radiative transfer in rectangular enclosures: A discretized exchange factor solution. J. Heat Transfer 111 4 (1989) 1117-1119
    • (1989) J. Heat Transfer , vol.111 , Issue.4 , pp. 1117-1119
    • Naraghi, M.H.N.1    Kassemi, M.2
  • 83
    • 0027683607 scopus 로고
    • A parallel processing approach for radiative heat transfer prediction in participating media
    • Saltiel C., and Naraghi M.H.N. A parallel processing approach for radiative heat transfer prediction in participating media. J. Thermophys. Heat Transfer 7 4 (1993) 739-742
    • (1993) J. Thermophys. Heat Transfer , vol.7 , Issue.4 , pp. 739-742
    • Saltiel, C.1    Naraghi, M.H.N.2
  • 84
    • 85003325855 scopus 로고
    • Radiative shape factors between differential ring elements on concentric axisymmetric bodies
    • Modest M.F. Radiative shape factors between differential ring elements on concentric axisymmetric bodies. J. Thermophys. Heat Transfer 2 1 (1988) 86-88
    • (1988) J. Thermophys. Heat Transfer , vol.2 , Issue.1 , pp. 86-88
    • Modest, M.F.1
  • 85
    • 0021530253 scopus 로고
    • A stochastic approach for analysis of radiative heat transfer in enclosures with non-participating media
    • Naraghi M.H.N., and Chung B.T.F. A stochastic approach for analysis of radiative heat transfer in enclosures with non-participating media. J. Heat Transfer 106 (1984) 690-698
    • (1984) J. Heat Transfer , vol.106 , pp. 690-698
    • Naraghi, M.H.N.1    Chung, B.T.F.2
  • 89
    • 48749147191 scopus 로고
    • Radial segregation induced by natural convection and melt/solid interface shape in vertical Bridgman growth
    • Chang C.J., and Brown R.A. Radial segregation induced by natural convection and melt/solid interface shape in vertical Bridgman growth. J. Cryst. Growth 63 (1983) 343-364
    • (1983) J. Cryst. Growth , vol.63 , pp. 343-364
    • Chang, C.J.1    Brown, R.A.2
  • 90
    • 46149141788 scopus 로고
    • Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth I. Simulation
    • Derby J.J., and Brown R.A. Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth I. Simulation. J. Cryst. Growth 74 (1986) 605-624
    • (1986) J. Cryst. Growth , vol.74 , pp. 605-624
    • Derby, J.J.1    Brown, R.A.2
  • 91
    • 0024749338 scopus 로고
    • An integrated process model for the growth of oxide crystals by the Czochralski method
    • Derby J.J., Atherton L.J., and Gresho P.M. An integrated process model for the growth of oxide crystals by the Czochralski method. J. Cryst. Growth 97 (1989) 792-826
    • (1989) J. Cryst. Growth , vol.97 , pp. 792-826
    • Derby, J.J.1    Atherton, L.J.2    Gresho, P.M.3
  • 93
    • 0024755325 scopus 로고
    • Finite element simulation of Czochralski bulk flow
    • Crowley A.B., Stern E.J., and Hurle D.T.J. Finite element simulation of Czochralski bulk flow. J. Cryst. Growth 97 (1989) 697-719
    • (1989) J. Cryst. Growth , vol.97 , pp. 697-719
    • Crowley, A.B.1    Stern, E.J.2    Hurle, D.T.J.3
  • 95
    • 0028760370 scopus 로고
    • Modeling of thermal fluid flow in the liquid encapsulated Czochralski process and comparison with experiments
    • Koai K., Seidl A., Leister H.-J., Müller G., and Kohler A. Modeling of thermal fluid flow in the liquid encapsulated Czochralski process and comparison with experiments. J. Cryst. Growth 137 (1994) 41-47
    • (1994) J. Cryst. Growth , vol.137 , pp. 41-47
    • Koai, K.1    Seidl, A.2    Leister, H.-J.3    Müller, G.4    Kohler, A.5
  • 96
    • 0027866960 scopus 로고
    • Global simulation of heat transport, including melt convection in a Czochralski crystal growth process-combined finite element/finite volume approach
    • Baumgartl J., Bune A., Koai K., and Müller G. Global simulation of heat transport, including melt convection in a Czochralski crystal growth process-combined finite element/finite volume approach. Mater. Sci. Eng. A 173 (1993) 9-13
    • (1993) Mater. Sci. Eng. A , vol.173 , pp. 9-13
    • Baumgartl, J.1    Bune, A.2    Koai, K.3    Müller, G.4
  • 97
    • 77956718024 scopus 로고
    • Surface tension effects on solidification of thin films via dip coating process
    • Moallemi M.K., and Zhang H. Surface tension effects on solidification of thin films via dip coating process. J. Mater. Proc. Manuf. Sci. 2 (1993) 233-243
    • (1993) J. Mater. Proc. Manuf. Sci. , vol.2 , pp. 233-243
    • Moallemi, M.K.1    Zhang, H.2
  • 98
    • 0029292885 scopus 로고
    • A multizone adaptive grid generation technique for simulation of moving and free boundary problems
    • Zhang H., and Moallemi M.K. A multizone adaptive grid generation technique for simulation of moving and free boundary problems. Numer. Heat Transfer, Part B 27 (1995) 255-276
    • (1995) Numer. Heat Transfer, Part B , vol.27 , pp. 255-276
    • Zhang, H.1    Moallemi, M.K.2
  • 99
    • 0030166265 scopus 로고    scopus 로고
    • A numerical algorithm using multizone grid generation for multiphase transport processes with moving and free boundaries
    • Zhang H., Prasad V., and Moallemi M.K. A numerical algorithm using multizone grid generation for multiphase transport processes with moving and free boundaries. Numer. Heat Transfer, Part B 29 (1996) 399-421
    • (1996) Numer. Heat Transfer, Part B , vol.29 , pp. 399-421
    • Zhang, H.1    Prasad, V.2    Moallemi, M.K.3
  • 100
    • 0025698520 scopus 로고
    • Numerical study of flow and heat transfer in LEC growth in GaAs with an axial magnetic field
    • Sabhapathy P., and Salcudean M.E. Numerical study of flow and heat transfer in LEC growth in GaAs with an axial magnetic field. J. Cryst. Growth 104 (1990) 371-388
    • (1990) J. Cryst. Growth , vol.104 , pp. 371-388
    • Sabhapathy, P.1    Salcudean, M.E.2
  • 101
    • 0027627945 scopus 로고
    • Thermal-analysis of the double-crucible method in continuous silicon Czochralski processing. 2. Numerical analysis
    • Ono N., Kida M., Arai Y., and Sahira K. Thermal-analysis of the double-crucible method in continuous silicon Czochralski processing. 2. Numerical analysis. J. Electrochem. Soc. 140 (1993) 2106-2111
    • (1993) J. Electrochem. Soc. , vol.140 , pp. 2106-2111
    • Ono, N.1    Kida, M.2    Arai, Y.3    Sahira, K.4
  • 104
    • 77956720345 scopus 로고    scopus 로고
    • Chui, W. K., Climm, J., Tangerman, F. M., and Zhang, H., (1996). Parallel algorithm for simulation of crystal growth processes. Presented at SIAM Ann. Meet., Kansas City, MO.
    • Chui, W. K., Climm, J., Tangerman, F. M., and Zhang, H., (1996). Parallel algorithm for simulation of crystal growth processes. Presented at SIAM Ann. Meet., Kansas City, MO.
  • 105
    • 0029340898 scopus 로고
    • Three-dimensional melt flows in Czochralski oxide growth: High-resolution, massively parallel, finite element computation
    • Xiao Q., and Derby J.J. Three-dimensional melt flows in Czochralski oxide growth: High-resolution, massively parallel, finite element computation. J. Cryst. Growth 152 (1995) 169-181
    • (1995) J. Cryst. Growth , vol.152 , pp. 169-181
    • Xiao, Q.1    Derby, J.J.2
  • 107
    • 77956744133 scopus 로고
    • Coupled melt flow and stress predictions for Czochralski crystal growth processes. Natl
    • Portland, OR, HTD
    • Zou, Y. F., Zhang, H., and Prasad, V., (1995). Coupled melt flow and stress predictions for Czochralski crystal growth processes. Natl. Heat Transfer Conf., Portland, OR, HTD, Vol. 302, pp. 121-130.
    • (1995) Heat Transfer Conf , vol.302 , pp. 121-130
    • Zou, Y.F.1    Zhang, H.2    Prasad, V.3
  • 108
    • 0030230306 scopus 로고    scopus 로고
    • Dynamics of melt-crystal interface and thermal stresses in Czochralski crystal growth processes
    • Zou Y.F., Zhang H., and Prasad V. Dynamics of melt-crystal interface and thermal stresses in Czochralski crystal growth processes. J. Cryst. Growth 166 (1996) 476-482
    • (1996) J. Cryst. Growth , vol.166 , pp. 476-482
    • Zou, Y.F.1    Zhang, H.2    Prasad, V.3
  • 109
    • 0019007084 scopus 로고
    • A thermoelastic analysis of dislocation generation in pulled GaAs crystals
    • Jordan A.S., Caruso R., and von Neida A.R. A thermoelastic analysis of dislocation generation in pulled GaAs crystals. Bell Syst. Tech. J. 59 (1980) 593-637
    • (1980) Bell Syst. Tech. J. , vol.59 , pp. 593-637
    • Jordan, A.S.1    Caruso, R.2    von Neida, A.R.3
  • 110
    • 0019560061 scopus 로고
    • A comparative study of thermal stress induced dislocation in pulled GaAs, InP, and Si crystals
    • Jordan A.S., von Neida A.R., and Caruso R. A comparative study of thermal stress induced dislocation in pulled GaAs, InP, and Si crystals. J. Appl. Phys. 52 5 (1981) 3331-3336
    • (1981) J. Appl. Phys. , vol.52 , Issue.5 , pp. 3331-3336
    • Jordan, A.S.1    von Neida, A.R.2    Caruso, R.3
  • 111
    • 0026206725 scopus 로고
    • Model-based control of thermal stresses during LEC growth of GaAs I. Validation of thermal model
    • Kelly K.W., Koai K., and Motakef S. Model-based control of thermal stresses during LEC growth of GaAs I. Validation of thermal model. J. Cryst. Growth 113 (1991) 254-264
    • (1991) J. Cryst. Growth , vol.113 , pp. 254-264
    • Kelly, K.W.1    Koai, K.2    Motakef, S.3
  • 112
    • 0026202355 scopus 로고
    • Model-based control of thermal stresses during LEC growth of GaAs II: Crystal growth experiment
    • Kelly K.W., Koai K., and Motakef S. Model-based control of thermal stresses during LEC growth of GaAs II: Crystal growth experiment. J. Cryst. Growth 113 (1991) 265-278
    • (1991) J. Cryst. Growth , vol.113 , pp. 265-278
    • Kelly, K.W.1    Koai, K.2    Motakef, S.3
  • 113
    • 0027906416 scopus 로고
    • Application of turbulence modeling to the integrated hydrodynamic thermal-capillary model of Czochralski crystal growth of silicon
    • Kinney T.A., and Brown R.A. Application of turbulence modeling to the integrated hydrodynamic thermal-capillary model of Czochralski crystal growth of silicon. J. Cryst. Growth 142 (1994) 551-574
    • (1994) J. Cryst. Growth , vol.142 , pp. 551-574
    • Kinney, T.A.1    Brown, R.A.2
  • 114
    • 0026106835 scopus 로고
    • Minimization of thermoelastic stresses in Czochralski grown silicon: Application of the integrated system model
    • Bornside D.E., Kinney T.A., and Brown R.A. Minimization of thermoelastic stresses in Czochralski grown silicon: Application of the integrated system model. J. Cryst. Growth 108 (1991) 779-805
    • (1991) J. Cryst. Growth , vol.108 , pp. 779-805
    • Bornside, D.E.1    Kinney, T.A.2    Brown, R.A.3
  • 115
    • 30244440508 scopus 로고
    • Numerical study of the Czochralski growth of oxide single crystal
    • Tanasawa I., and Lior N. (Eds), Hemisphere, Washington, DC
    • Imaishi N., Tsukada T., Hozawa M., Okano Y., and Hirata A. Numerical study of the Czochralski growth of oxide single crystal. In: Tanasawa I., and Lior N. (Eds). Heat and Mass Transfer in Material Processing (1992), Hemisphere, Washington, DC 123-136
    • (1992) Heat and Mass Transfer in Material Processing , pp. 123-136
    • Imaishi, N.1    Tsukada, T.2    Hozawa, M.3    Okano, Y.4    Hirata, A.5
  • 116
    • 0024737777 scopus 로고
    • A new model for the calculation of dislocation formation in semiconductor melt growth by taking into account the dynamics of plastic deformation
    • Völkl J., and Müller G. A new model for the calculation of dislocation formation in semiconductor melt growth by taking into account the dynamics of plastic deformation. J. Cryst. Growth 97 (1989) 136-145
    • (1989) J. Cryst. Growth , vol.97 , pp. 136-145
    • Völkl, J.1    Müller, G.2
  • 117
    • 0000058992 scopus 로고
    • Stress in the cooling crystal
    • Hurle D.T.J. (Ed), North-Holland, New York
    • Völkl J. Stress in the cooling crystal. In: Hurle D.T.J. (Ed). Handbook of Crystal Growth 2b (1994), North-Holland, New York 821-874
    • (1994) Handbook of Crystal Growth , vol.2 b , pp. 821-874
    • Völkl, J.1
  • 118
    • 0002417558 scopus 로고
    • Dislocations in the diamond structure
    • Alexander H., and Haasen P. Dislocations in the diamond structure. Solid State Phys. 22 (1968) 28
    • (1968) Solid State Phys. , vol.22 , pp. 28
    • Alexander, H.1    Haasen, P.2
  • 119
    • 0026412513 scopus 로고
    • On the prediction of dislocation formation in semiconductor crystals grown from the melt: Analysis of Haasen model for plastic deformation dynamics
    • Maroudas D., and Brown R.A. On the prediction of dislocation formation in semiconductor crystals grown from the melt: Analysis of Haasen model for plastic deformation dynamics. J. Cryst. Growth 108 (1991) 399-415
    • (1991) J. Cryst. Growth , vol.108 , pp. 399-415
    • Maroudas, D.1    Brown, R.A.2
  • 120
    • 0024656763 scopus 로고
    • Thermoelastic analysis of GaAs in LEC growth configuration
    • Motakef S. Thermoelastic analysis of GaAs in LEC growth configuration. J. Cryst. Growth 96 (1989) 201-216
    • (1989) J. Cryst. Growth , vol.96 , pp. 201-216
    • Motakef, S.1
  • 121
    • 0026202209 scopus 로고
    • Comparison of calculated and measured dislocation density in LEC-grown GaAs crystals
    • Motakef S., Kelly K.W., and Koai K. Comparison of calculated and measured dislocation density in LEC-grown GaAs crystals. J. Cryst. Growth 113 (1991) 279-288
    • (1991) J. Cryst. Growth , vol.113 , pp. 279-288
    • Motakef, S.1    Kelly, K.W.2    Koai, K.3
  • 122
    • 0023363447 scopus 로고
    • Analysis of generation and movement of dislocations in InP by a study of the deformation behavior
    • Völkl V., Müller G., and Blum W. Analysis of generation and movement of dislocations in InP by a study of the deformation behavior. J. Cryst. Growth 83 (1987) 383-390
    • (1987) J. Cryst. Growth , vol.83 , pp. 383-390
    • Völkl, V.1    Müller, G.2    Blum, W.3
  • 124
    • 0002741587 scopus 로고
    • Transition to turbulence in Rayleigh-Bénard convection
    • Busse F.H. Transition to turbulence in Rayleigh-Bénard convection. Top. Appl. Phys. 45 (1985) 95-137
    • (1985) Top. Appl. Phys. , vol.45 , pp. 95-137
    • Busse, F.H.1
  • 126
    • 84975992729 scopus 로고
    • Some further studies on the transition to turbulent convection
    • Krishnamurthi R. Some further studies on the transition to turbulent convection. J. Fluid Mech. 60 (1984) 285-303
    • (1984) J. Fluid Mech. , vol.60 , pp. 285-303
    • Krishnamurthi, R.1
  • 128
    • 0024014512 scopus 로고
    • Scaling analysis of the flow of low Prandtl number Czochralski melt
    • Jones A.D.W. Scaling analysis of the flow of low Prandtl number Czochralski melt. J. Cryst. Growth 88 (1988) 465-476
    • (1988) J. Cryst. Growth , vol.88 , pp. 465-476
    • Jones, A.D.W.1
  • 131
    • 0020978570 scopus 로고
    • Interfacial transport in crystal growth, a parametric comparison of convective effects
    • Rosenberger F., and Müller G. Interfacial transport in crystal growth, a parametric comparison of convective effects. J. Cryst. Growth 65 (1983) 91-104
    • (1983) J. Cryst. Growth , vol.65 , pp. 91-104
    • Rosenberger, F.1    Müller, G.2
  • 132
    • 0022046373 scopus 로고
    • Stability experiments in the flow over a rotating disk
    • Wilkinson S.P., and Malik M.R. Stability experiments in the flow over a rotating disk. AIAA J. 23 (1985) 588-595
    • (1985) AIAA J. , vol.23 , pp. 588-595
    • Wilkinson, S.P.1    Malik, M.R.2
  • 133
    • 34250488593 scopus 로고
    • Thermocapillary convection in a horizontal layer of liquid
    • Birikh R.V. Thermocapillary convection in a horizontal layer of liquid. J. Appl. Mech. Tech. Phys. 7 (1966) 43-44
    • (1966) J. Appl. Mech. Tech. Phys. , vol.7 , pp. 43-44
    • Birikh, R.V.1
  • 134
    • 0000529378 scopus 로고
    • Nonmixing cells due to crucible rotation during Czochralski crystal growth
    • Carruthers J.R., and Nassau K. Nonmixing cells due to crucible rotation during Czochralski crystal growth. J. Appl. Phys. 39 (1986) 5205-5214
    • (1986) J. Appl. Phys. , vol.39 , pp. 5205-5214
    • Carruthers, J.R.1    Nassau, K.2
  • 135
    • 0001212588 scopus 로고
    • Flow transitions and interface shapes in the Czochralski growth of oxide crystals
    • Carruthers J.R. Flow transitions and interface shapes in the Czochralski growth of oxide crystals. J. Cryst. Growth 36 (1976) 212-214
    • (1976) J. Cryst. Growth , vol.36 , pp. 212-214
    • Carruthers, J.R.1
  • 136
    • 49049149418 scopus 로고
    • Hydrodynamics in Czochralski growth
    • Kobayashi N. Hydrodynamics in Czochralski growth. J. Cryst. Growth 52 (1981) 425-434
    • (1981) J. Cryst. Growth , vol.52 , pp. 425-434
    • Kobayashi, N.1
  • 137
    • 77956767926 scopus 로고
    • Three-dimensional numerical studies of the physics of semi-conductor crystal growth
    • Tech. Rep, Off. Nav. Res. AD-A176 808, Rep. R-920018-F
    • Chan, Y. T., Gibeling, H. J., Liu, N.-S., and Grubin, H. L., (1987). Three-dimensional numerical studies of the physics of semi-conductor crystal growth. Tech. Rep., Off. Nav. Res. AD-A176 808, Rep. R-920018-F.
    • (1987)
    • Chan, Y.T.1    Gibeling, H.J.2    Liu, N.-S.3    Grubin, H.L.4
  • 139
    • 0011724347 scopus 로고
    • A parameter sensitivity study for Czochralski bulk flow of silicon
    • Langlois W.E. A parameter sensitivity study for Czochralski bulk flow of silicon. J. Cryst. Growth 56 (1982) 15-19
    • (1982) J. Cryst. Growth , vol.56 , pp. 15-19
    • Langlois, W.E.1
  • 141
    • 0027702357 scopus 로고
    • Oscillatory convection in low aspect ratio Czochralski melts
    • Anselmo A.P., Prasad V., Koziol J., and Gupta K.P. Oscillatory convection in low aspect ratio Czochralski melts. J. Cryst. Growth 134 (1993) 116-139
    • (1993) J. Cryst. Growth , vol.134 , pp. 116-139
    • Anselmo, A.P.1    Prasad, V.2    Koziol, J.3    Gupta, K.P.4
  • 142
    • 0023345852 scopus 로고
    • Effects of the finite electrical conductivity of the crystal on hydro-magnetic Czochralski flow
    • Langlois W.E., Hjellming L.N., and Walker J.S. Effects of the finite electrical conductivity of the crystal on hydro-magnetic Czochralski flow. J. Cryst. Growth 83 (1987) 51-61
    • (1987) J. Cryst. Growth , vol.83 , pp. 51-61
    • Langlois, W.E.1    Hjellming, L.N.2    Walker, J.S.3
  • 143
    • 0000066202 scopus 로고
    • Bifurcation in axisymmetric Czochralski natural convection
    • Bottaro A., and Zebib A. Bifurcation in axisymmetric Czochralski natural convection. Phys. Fluids 31 3 (1988) 495-501
    • (1988) Phys. Fluids , vol.31 , Issue.3 , pp. 495-501
    • Bottaro, A.1    Zebib, A.2
  • 144
    • 0024739435 scopus 로고
    • Three-dimensional three convection in Czochralski melt
    • Bottaro A., and Zebib A. Three-dimensional three convection in Czochralski melt. J. Cryst. Growth 97 (1989) 50-58
    • (1989) J. Cryst. Growth , vol.97 , pp. 50-58
    • Bottaro, A.1    Zebib, A.2
  • 146
    • 0020798947 scopus 로고
    • Recent advances and future directions in Cz silicon crystal growth technology
    • Feigl G. Recent advances and future directions in Cz silicon crystal growth technology. Solid State Technol. (1983) 121-131
    • (1983) Solid State Technol. , pp. 121-131
    • Feigl, G.1
  • 147
    • 77956759236 scopus 로고
    • Heat and fluid analysis on the growth of larger diameter silicon single-crystal
    • Araki T., and Matsuura A. Heat and fluid analysis on the growth of larger diameter silicon single-crystal. ASME/JSME Therm. Eng. Proc. 1 (1991) 413-418
    • (1991) ASME/JSME Therm. Eng. Proc. , vol.1 , pp. 413-418
    • Araki, T.1    Matsuura, A.2
  • 148
    • 0026191484 scopus 로고
    • Computer modeling of heat transfer in Czochralski silicon
    • Virzi A. Computer modeling of heat transfer in Czochralski silicon. J. Cryst. Growth 112 (1991) 699-722
    • (1991) J. Cryst. Growth , vol.112 , pp. 699-722
    • Virzi, A.1
  • 150
    • 0028416347 scopus 로고
    • Experimental observation and numerical simulations of wave patterns in a Czochralski silicon melt
    • Seidl A., McCord G., Müller G., and Leister H.-J. Experimental observation and numerical simulations of wave patterns in a Czochralski silicon melt. J. Cryst. Growth 137 (1994) 326-334
    • (1994) J. Cryst. Growth , vol.137 , pp. 326-334
    • Seidl, A.1    McCord, G.2    Müller, G.3    Leister, H.-J.4
  • 151
    • 0024739434 scopus 로고
    • Instability of the buoyancy driven convection in si melts during Czochralski crystal growth
    • Mihelčić M., and Wingerath K. Instability of the buoyancy driven convection in si melts during Czochralski crystal growth. J. Cryst. Growth 97 (1989) 42-49
    • (1989) J. Cryst. Growth , vol.97 , pp. 42-49
    • Mihelčić, M.1    Wingerath, K.2
  • 152
    • 0030284868 scopus 로고    scopus 로고
    • Liquid crystal visualization of the effects of crucible and crystal rotation on Cz melt flows
    • Mukherjee D.K., Prasad V., Dutta P., and Yuan T. Liquid crystal visualization of the effects of crucible and crystal rotation on Cz melt flows. J. Cryst. Growth 169 (1996) 136-146
    • (1996) J. Cryst. Growth , vol.169 , pp. 136-146
    • Mukherjee, D.K.1    Prasad, V.2    Dutta, P.3    Yuan, T.4
  • 153
    • 6144288804 scopus 로고
    • Numerical simulations of the Czochralski bulk flow in an axial magnetic field: Effects on the flow and temperature oscillations in the melt
    • Mihelčić M., and Wingerath K. Numerical simulations of the Czochralski bulk flow in an axial magnetic field: Effects on the flow and temperature oscillations in the melt. J. Cryst. Growth 71 (1985) 163-168
    • (1985) J. Cryst. Growth , vol.71 , pp. 163-168
    • Mihelčić, M.1    Wingerath, K.2
  • 154
    • 0026910287 scopus 로고
    • Oxygen in Czochralski silicon crystals grown under an axial magnetic field
    • Salnik Z.A. Oxygen in Czochralski silicon crystals grown under an axial magnetic field. J. Cryst. Growth 121 (1992) 775-780
    • (1992) J. Cryst. Growth , vol.121 , pp. 775-780
    • Salnik, Z.A.1
  • 155
    • 0028760386 scopus 로고
    • Numerical investigation of three-dimensional melt convection with the magnetic Czochralski method
    • Oshima M., Taniguchi N., and Kobayashi T. Numerical investigation of three-dimensional melt convection with the magnetic Czochralski method. J. Cryst. Growth 137 (1994) 48-53
    • (1994) J. Cryst. Growth , vol.137 , pp. 48-53
    • Oshima, M.1    Taniguchi, N.2    Kobayashi, T.3
  • 156
    • 0002138247 scopus 로고
    • Use of a magnetic field in melt growth
    • Hurle D.T.J. (Ed), North-Holland, New York
    • Hurle D.T.J., and Series R.W. Use of a magnetic field in melt growth. In: Hurle D.T.J. (Ed). Handbook of Crystal Growth 2a (1994), North-Holland, New York 99-211
    • (1994) Handbook of Crystal Growth , vol.2 a , pp. 99-211
    • Hurle, D.T.J.1    Series, R.W.2
  • 157
    • 0025698330 scopus 로고
    • Flow instability of molten silicon in the Czochralski configuration
    • Kakimoto K., Eguchi M., Watanabe H., and Hibiya T. Flow instability of molten silicon in the Czochralski configuration. J. Cryst. Growth 102 (1990) 16-20
    • (1990) J. Cryst. Growth , vol.102 , pp. 16-20
    • Kakimoto, K.1    Eguchi, M.2    Watanabe, H.3    Hibiya, T.4
  • 158
    • 0025545568 scopus 로고
    • Onset of oscillatory flow in a Czochralski growth melt and its suppression by magnetic field
    • Munakata T., and Tanasawa I. Onset of oscillatory flow in a Czochralski growth melt and its suppression by magnetic field. J. Cryst. Growth 106 (1990) 566-576
    • (1990) J. Cryst. Growth , vol.106 , pp. 566-576
    • Munakata, T.1    Tanasawa, I.2
  • 159
    • 0006037748 scopus 로고
    • Simulations of Czochralski growth on crystal rotation influence in fixed crucibles
    • Shiroki K. Simulations of Czochralski growth on crystal rotation influence in fixed crucibles. J. Cryst. Growth 40 (1977) 129-138
    • (1977) J. Cryst. Growth , vol.40 , pp. 129-138
    • Shiroki, K.1
  • 160
    • 0000831362 scopus 로고
    • Fluid flow patterns in a simulated garnet melt
    • Miller D.C., and Pernell T.L. Fluid flow patterns in a simulated garnet melt. J. Cryst. Growth 57 (1982) 253-260
    • (1982) J. Cryst. Growth , vol.57 , pp. 253-260
    • Miller, D.C.1    Pernell, T.L.2
  • 161
    • 0021002789 scopus 로고
    • Experiments on buoyant, thermocapillary, and forced convection in Czochralski configuration
    • Lamphrecht R., Schwabe D., Scharmann A., and Schultheiss E. Experiments on buoyant, thermocapillary, and forced convection in Czochralski configuration. J. Cryst. Growth 65 (1983) 143-152
    • (1983) J. Cryst. Growth , vol.65 , pp. 143-152
    • Lamphrecht, R.1    Schwabe, D.2    Scharmann, A.3    Schultheiss, E.4
  • 163
    • 0024960070 scopus 로고
    • Natural and forced convection of molten silicon during Czochralski single crystal growth
    • Kakimoto K., Eguchi M., Watanabe H., and Hibiya T. Natural and forced convection of molten silicon during Czochralski single crystal growth. J. Cryst. Growth 94 (1989) 412-420
    • (1989) J. Cryst. Growth , vol.94 , pp. 412-420
    • Kakimoto, K.1    Eguchi, M.2    Watanabe, H.3    Hibiya, T.4
  • 164
    • 0028761075 scopus 로고
    • Flow instability of the melt during Czochralski Si crystal growth: Dependence on growth conditions; a numerical simulation study
    • Kakomoto K., Watanabe M., Eguchi M., and Hibiya T. Flow instability of the melt during Czochralski Si crystal growth: Dependence on growth conditions; a numerical simulation study. J. Cryst. Growth 139 (1994) 197-205
    • (1994) J. Cryst. Growth , vol.139 , pp. 197-205
    • Kakomoto, K.1    Watanabe, M.2    Eguchi, M.3    Hibiya, T.4
  • 165
    • 0026412813 scopus 로고
    • Transition mechanism of flow modes in Czochralski convection
    • Ozoe H., Toh K., and Inoue T. Transition mechanism of flow modes in Czochralski convection. J. Cryst. Growth 110 (1991) 472-480
    • (1991) J. Cryst. Growth , vol.110 , pp. 472-480
    • Ozoe, H.1    Toh, K.2    Inoue, T.3
  • 166
    • 0027557276 scopus 로고
    • Observation of crystal-melt interface shape in simulated Czochralski method with model fluid
    • Hirata A., and Tachibana M. Observation of crystal-melt interface shape in simulated Czochralski method with model fluid. J. Cryst. Growth 128 (1993) 195-200
    • (1993) J. Cryst. Growth , vol.128 , pp. 195-200
    • Hirata, A.1    Tachibana, M.2
  • 169
    • 2542641891 scopus 로고
    • Turbulent free convection in Czochralski crystal growth
    • Wilcox W.R., and Fullmer L.D. Turbulent free convection in Czochralski crystal growth. J. Appl. Phys. 36 (1965) 2201-2206
    • (1965) J. Appl. Phys. , vol.36 , pp. 2201-2206
    • Wilcox, W.R.1    Fullmer, L.D.2
  • 170
    • 0015387920 scopus 로고
    • Crystal growth from the melt under destabilizing thermal gradients
    • Kim K.M., Witt A.F., and Gatos H.C. Crystal growth from the melt under destabilizing thermal gradients. J. Electrochem. Soc. 119 (1972) 1218-1226
    • (1972) J. Electrochem. Soc. , vol.119 , pp. 1218-1226
    • Kim, K.M.1    Witt, A.F.2    Gatos, H.C.3
  • 171
    • 0346042764 scopus 로고
    • The behavior of nonrotational striations in Silicon
    • Kolker H. The behavior of nonrotational striations in Silicon. J. Cryst. Growth 50 (1980) 852-858
    • (1980) J. Cryst. Growth , vol.50 , pp. 852-858
    • Kolker, H.1
  • 173
    • 0024734617 scopus 로고
    • Numerical method for reducing stress level in GaAs crystals
    • Dupret F., Necodeme P., and Ryckmans Y. Numerical method for reducing stress level in GaAs crystals. J. Cryst. Growth 97 (1989) 162-172
    • (1989) J. Cryst. Growth , vol.97 , pp. 162-172
    • Dupret, F.1    Necodeme, P.2    Ryckmans, Y.3
  • 175
    • 0028486548 scopus 로고
    • Radiation heat transfer of a Czochralski growth furnace with arbitrary specular and diffuse surfaces
    • Maruyama S., and Aihara T. Radiation heat transfer of a Czochralski growth furnace with arbitrary specular and diffuse surfaces. Int. J. Heat Mass Transfer 37 (1994) 1723-1731
    • (1994) Int. J. Heat Mass Transfer , vol.37 , pp. 1723-1731
    • Maruyama, S.1    Aihara, T.2
  • 176
    • 0030564155 scopus 로고    scopus 로고
    • Full-scale experiments on solid-pellets feed continuous Czochralski growth of silicon crystals
    • Anselmo A.P., Koziol J., and Prasad V. Full-scale experiments on solid-pellets feed continuous Czochralski growth of silicon crystals. J. Cryst. Growth 163 (1996) 359-368
    • (1996) J. Cryst. Growth , vol.163 , pp. 359-368
    • Anselmo, A.P.1    Koziol, J.2    Prasad, V.3
  • 177
    • 0029633175 scopus 로고
    • Role of crucible partition in improving Czochralski melt conditions
    • Jafri I.H., Prasad V., and Anselmo A.P. Role of crucible partition in improving Czochralski melt conditions. J. Cryst. Growth 154 (1995) 280-292
    • (1995) J. Cryst. Growth , vol.154 , pp. 280-292
    • Jafri, I.H.1    Prasad, V.2    Anselmo, A.P.3
  • 179
    • 0001050487 scopus 로고
    • Estimated thermal diffusivity, Prandtl number and Grashof number of molten GaAs, InP, and GaSb
    • Jordan A.S. Estimated thermal diffusivity, Prandtl number and Grashof number of molten GaAs, InP, and GaSb. J. Cryst. Growth 71 (1985) 551-558
    • (1985) J. Cryst. Growth , vol.71 , pp. 551-558
    • Jordan, A.S.1
  • 180
    • 0000034306 scopus 로고
    • Some thermal and mechanical properties of InP essential to crystal growth modeling
    • Jordan A.S. Some thermal and mechanical properties of InP essential to crystal growth modeling. J. Cryst. Growth 71 (1985) 559-565
    • (1985) J. Cryst. Growth , vol.71 , pp. 559-565
    • Jordan, A.S.1
  • 181
    • 0027553772 scopus 로고
    • Thermal stress theory of dislocation reduction in the vertical gradient freeze (VGF) growth of GaAs and InP
    • Jordan A.S., Monberg E.M., and Clemans J.E. Thermal stress theory of dislocation reduction in the vertical gradient freeze (VGF) growth of GaAs and InP. J. Cryst. Growth 128 (1993) 444-450
    • (1993) J. Cryst. Growth , vol.128 , pp. 444-450
    • Jordan, A.S.1    Monberg, E.M.2    Clemans, J.E.3
  • 182
    • 4143052196 scopus 로고    scopus 로고
    • Transport phenomena in a high pressure crystal growth system: In-situ synthesis for InP melt
    • (in press)
    • Zhang H., Prasad V., Anselmo A., Bliss D.F., and Iseler G. Transport phenomena in a high pressure crystal growth system: In-situ synthesis for InP melt. J. Cryst. Growth (1996) (in press)
    • (1996) J. Cryst. Growth
    • Zhang, H.1    Prasad, V.2    Anselmo, A.3    Bliss, D.F.4    Iseler, G.5
  • 184
    • 0031247559 scopus 로고    scopus 로고
    • Macrosegregation, dynamics of interface and stresses in high pressure LEC grown crystals
    • (in press)
    • Zou Y.F., Wang G.-X., Zhang H., and Prasad V. Macrosegregation, dynamics of interface and stresses in high pressure LEC grown crystals. J. Cryst. Growth (1997) (in press)
    • (1997) J. Cryst. Growth
    • Zou, Y.F.1    Wang, G.-X.2    Zhang, H.3    Prasad, V.4


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