Interplay between the rmoelectric and the rmionic effects in heterostructures

ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)

Volumn 2000-T, Issue , 2000, Pages 353-359

  Zeng, Taofang ^a   Chen, Gang ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN EQUATION; ELECTRON TEMPERATURE; FILM THICKNESS; HEAT TRANSFER; INTERFACES (MATERIALS); THERMIONIC EMISSION;

DOUBLE HETEROJUNCTIONS; ELECTRON MEAN-FREE PATH; FILM-THICKNESS; HETEROJUNCTION STRUCTURES; POWER GENERATION APPLICATIONS; THERMIONIC EFFECTS; THERMIONIC PROCESS; THERMOELECTRIC; THERMOELECTRIC PROCESS; UNIFIED MODELING;

HETEROJUNCTIONS;

EID: 77956672374     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1115/IMECE2000-1454     Document Type: Conference Paper

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