A study of the bonding-wire reliability on the chip surface electrode in IGBT

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2010, Pages 289-292

  Ikeda, Yoshinari ^a   Hokazono, Hiroaki ^a   Sakai, Shigeru ^a   Nishimura, Tomohiro ^a   Takahashi, Yoshikazu ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL ELECTRODE; BARRIER PROPERTIES; CHIP SURFACES; ELECTRODE DEGRADATION; HIGH TEMPERATURE CONDITION; IGBT-CHIP; NI PLATING; POWER CYCLING;

POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; WIRE;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 77956594629     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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3. M. Horio, et al, "Investigations of High Temperature IGBT Module Package Structure, " Proceedings of PCIM Europe, 2007.
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5. th ISPSD, pp. 144-147, 2003.
6. th ISPSD, pp. 189-192, 2008.