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Volumn , Issue , 2010, Pages 1-4

Emerging non-volatile memory technologies: From materials, to device, circuit, and architecture

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTING SYSTEM; DESIGN CONSIDERATIONS; DEVICE MODELING; EMERGING NON-VOLATILE MEMORY TECHNOLOGY; MAGNETIC MEMORIES; MEMRISTOR; PROCESS TECHNOLOGIES; RANDOM ACCESS MEMORIES; RESISTIVE MEMORIES; SPIN TRANSFER TORQUE;

EID: 77956567581     PISSN: 15483746     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSCAS.2010.5548590     Document Type: Conference Paper
Times cited : (9)

References (14)
  • 3
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    • A bipolar-selected phase change memory featuring multi-level cell storage
    • Feb.
    • T. Bedeschi, et al, "A bipolar-selected phase change memory featuring multi-level cell storage," IEEE J. of Solid-State, vol. 44, no. 1, pp. 217-227, Feb. 2008.
    • (2008) IEEE J. of Solid-state , vol.44 , Issue.1 , pp. 217-227
    • Bedeschi, T.1
  • 4
    • 20844455024 scopus 로고    scopus 로고
    • Magnetoresistive random access memory using magnetic tunnel junctions
    • May
    • S. Tehrani, et al, "Magnetoresistive random access memory using magnetic tunnel junctions," Proc. IEEE, pp. 703-714, May 2003.
    • (2003) Proc. IEEE , pp. 703-714
    • Tehrani, S.1
  • 5
    • 33847743417 scopus 로고    scopus 로고
    • A novel nonvolatile memory with spin torque transfer magnetization switching: Spin-RAM
    • Dec.
    • M. Hosomi, et al, "A novel nonvolatile memory with spin torque transfer magnetization switching: spin-RAM," in IEEE Int'l Electron Device Meeting, Dec. 2005, pp. 459-462.
    • (2005) IEEE Int'l Electron Device Meeting , pp. 459-462
    • Hosomi, M.1
  • 6
    • 55449122987 scopus 로고    scopus 로고
    • Overview of candidate device technologies for storage-class memory
    • G. W. Burr, et al, "Overview of candidate device technologies for storage-class memory," IBM Journal Research and Device, 52(4/5): 449-464, 2008.
    • (2008) IBM Journal Research and Device , vol.52 , Issue.4-5 , pp. 449-464
    • Burr, G.W.1
  • 7
  • 8
    • 34247864561 scopus 로고    scopus 로고
    • 2Mb spin-transfer torque RAM (SPRAM) with bit-by-bit bidirectional current write and parallelizing-direction current read
    • T. Kawahara, et al., "2Mb spin-transfer torque RAM (SPRAM) with bit-by-bit bidirectional current write and parallelizing-direction current read," Intl Solid-State Circuits Conference, pp. 480-617, 2007.
    • (2007) Intl Solid-state Circuits Conference , pp. 480-617
    • Kawahara, T.1
  • 10
    • 39349114172 scopus 로고    scopus 로고
    • Thermal fluctuation effects on spin torque induced switching: Mean and variations
    • X. Wang, et al, "Thermal Fluctuation Effects on Spin Torque Induced Switching: Mean and Variations," J. Appl. Phys., 103, 034507, 2008.
    • (2008) J. Appl. Phys. , vol.103 , pp. 034507
    • Wang, X.1
  • 11
    • 0030174367 scopus 로고    scopus 로고
    • Current driven excitation of magnetic multilayers
    • Jun.
    • J. C. Slonczeski, "Current driven excitation of magnetic multilayers", J.Magnetism and Magnetic Materials., vol. 159, pp. L1-L7, Jun. 1996.
    • (1996) J.Magnetism and Magnetic Materials , vol.159
    • Slonczeski, J.C.1
  • 12
    • 0001317947 scopus 로고    scopus 로고
    • Emission of spin waves by magnetic multilayer traversed by a current
    • L. Berger, "Emission of spin waves by magnetic multilayer traversed by a current," Phys. Rev. B., vol. 54-13, pp. 9353-9358, 1996.
    • (1996) Phys. Rev. B. , vol.54 , Issue.13 , pp. 9353-9358
    • Berger, L.1
  • 14
    • 70350074635 scopus 로고    scopus 로고
    • An overview of non-volatile memory technology and the implication for tools and architectures
    • H. Li and Y. Chen, "An overview of non-volatile memory technology and the implication for tools and architectures," in 2009 Design, Automation & Test in Europe Conference & Exhibition, pp. 731-736.
    • 2009 Design, Automation & Test in Europe Conference & Exhibition , pp. 731-736
    • Li, H.1    Chen, Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.