SiC power devices for Smart Grid systems

2010 International Power Electronics Conference - ECCE Asia -, IPEC 2010

Volumn , Issue , 2010, Pages 1006-1013

  Palmour, J W ^a   Zhang, J Q ^a   Das, M K ^a   Callanan, R ^a   Agarwal, A K ^a   Grider, D E ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

GTOs; IGBTs; MOSFETs; SiC

Indexed keywords

CIRCUIT BREAKER; CURRENT STATUS; DEVICE DESIGN; DISTRIBUTED GENERATION; GTOS; HIGH VOLTAGE; HIGH VOLTAGE POWER; IGBTS; IN-BUILDINGS; MOSFETS; POWER DEVICES; SIC; SMART GRID;

ELECTRIC EQUIPMENT; GAS EMISSIONS; GLOBAL WARMING; GREENHOUSE GASES; MESH GENERATION; MOSFET DEVICES; POWER ELECTRONICS; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956502115     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPEC.2010.5542027     Document Type: Conference Paper

References (3)

1. M. Das, Q. Zhang, R. Callanan, C. Capell, J. Clayton, M. Donofrio, S. Haney, F. Husna, C. Jonas, J. Richmond, and J. Sumakeris, Materials Science Forum, vol. 600-603, A. Suzuki, et al, Eds (ISSN 0255-5476) pp. 1183-1186, 2009.
2. Q. Zhang, M. Das, J. Sumakeris, R. Callanan, and A. Agarwal, IEEE Electron. Dev. Lett., v. 29, no. 9, pp. 1027-29, Sept. 2008.
3. A. Agarwal, J. Q. Zhang, R. Callanan, C. Capell, A. Burk, M. O'Loughlin, J. Palmour, V. Temple, R. Stahlbush, J. Caldwell, H. O'Brien, and C. Scozzie, presented in ICSCRM, Sept. 2009.