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Volumn 79, Issue 8, 2010, Pages

Stabilization mechanism of vacancies in group-III nitrides: Exchange splitting and electron transfer

Author keywords

First principles calculations; Group III nitrides; Spin polarization; Vacancy

Indexed keywords


EID: 77956436749     PISSN: 00319015     EISSN: 13474073     Source Type: Journal    
DOI: 10.1143/JPSJ.79.083705     Document Type: Article
Times cited : (14)

References (24)
  • 1
    • 0004200984 scopus 로고
    • For a review, ed. S. T. Pantelides Gordon and Breach, New York
    • For a review, Deep Centers in Semiconductors, ed. S. T. Pantelides (Gordon and Breach, New York, 1986).
    • (1986) Deep Centers in Semiconductors
  • 22
    • 77956443076 scopus 로고    scopus 로고
    • Note that the occupancy of the defect levels within the band gap and the magnetic moment depend on the number of electrons for the N dangling bonds resonant in the valence bands as shown in Fig. 2 b
    • Note that the occupancy of the defect levels within the band gap and the magnetic moment depend on the number of electrons for the N dangling bonds resonant in the valence bands as shown in Fig. 2 (b).
  • 23
    • 77956424785 scopus 로고    scopus 로고
    • Indeed, in the case of silicon where the defect properties are well identified, large multivacancies, e.g., hexavacancy, have been observed by positron annihilation. In semiconductor device fabrications, thermal annealing enhances diffusion of monovacancies, which can result in the formation of multivacancy. Even though the formation energy of n-vacancy is large, it emerges if energetically favorable than the presence of isolated n monovacancies. Therefore, the comparison should be made for three monovacancies with single trivacancy
    • Indeed, in the case of silicon where the defect properties are well identified, large multivacancies, e.g., hexavacancy, have been observed by positron annihilation. In semiconductor device fabrications, thermal annealing enhances diffusion of monovacancies, which can result in the formation of multivacancy. Even though the formation energy of n-vacancy is large, it emerges if energetically favorable than the presence of isolated n monovacancies. Therefore, the comparison should be made for three monovacancies with single trivacancy.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.