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Applied Physics Letters

Volumn 97, Issue 9, 2010, Pages

Multiple-level threshold switching behavior of In2 Se 3 confined in a nanostructured silicon substrate

(6) Lee, Jae Young a Sun, Ke a Li, Biyun a Xie, Ya Hong a Wei, Xinyu b Russell, Thomas P b

a University of California (United States)

b UNIVERSITY OF MASSACHUSETTS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL OBSERVATION; HETEROJUNCTION DEVICES; HIGH-DENSITY ARRAYS; JUNCTION AREA; NANOSTRUCTURED SILICON; RADIUS OF CURVATURE; SWITCHING BEHAVIORS; THRESHOLD SWITCHING;

HETEROJUNCTIONS;

EID: 77956388069 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3486122 Document Type: Article

Times cited : (10)

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