Electron spin resonance of Zn1-x Mgx O thin films grown by plasma-assisted molecular beam epitaxy

Applied Physics Letters

Volumn 97, Issue 9, 2010, Pages

  Wassner, T A ^a   Laumer, B ^a,b   Althammer, M ^c   Goennenwein, S T B ^c   Stutzmann, M ^a   Eickhoff, M ^b   Brandt, M S ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b JUSTUS LIEBIG UNIVERSITY   (Germany)

^c WALTHER MEISSNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; C-PLANE SAPPHIRE SUBSTRATES; CONDUCTION BAND ELECTRONS; ELECTRON SPIN RESONANCE; G FACTORS; MG CONTENT; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RESONANCE SIGNALS;

ANISOTROPY; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM; MOLECULAR BEAM EPITAXY; PARAMAGNETIC RESONANCE; RESONANCE; SPIN DYNAMICS; THIN FILMS; ZINC;

MOLECULAR BEAMS;

EID: 77956381720     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3477951     Document Type: Article

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